August 2008
MMBFJ270
P-Channel Switch
Features
•
This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
G
•
Sourced from process 88.
S
D
SOT-23
Mark : 61S
Absolute Maximum Ratings (Note1)
Symbol Parameter
T = 25°C unless otherwise noted
a
Value
-30
Units
V
VDG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
VGS
30
V
IGF
50
mA
°C
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
Note1 : These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Total Device Dissipation
Derate above 25°C
225
1.8
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient (Note2)
556
°C/W
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
MIN
MAX
Units
Off Characteristics (Note3)
V(BR)GSS
IGSS
Gate-Source Breakdwon Voltage
Gate Reverse Current
IG = 1.0µA, VDS = 0
30
V
pA
V
VGS = 20V, VDS = 0
200
2.0
VGS(off)
Gate-Source Cutoff Voltage
VDS = -15V, ID = -1.0nA
0.5
On Characteristics (Note3)
IDSS
gfs
Zero-Gate Voltage Drain Current * VDS = -15V, VGS = 0
-2.0
-15
15000
200
mA
Forward Transferconductance
VGS = 0V, VDS = 15V, f = 1.0kHz
6000
µmhos
µmhos
goss
Common- Source Output Conduc- VGS = 0V, VDS = 15V, f = 1.0kHz
tance
Note3 : Short duration test pulse used to minimize self-heating effect.
© 2008 Fairchild Semiconductor Corporation
MMBFJ270 Rev. B
www.fairchildsemi.com
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