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MMBFJ270_08 PDF预览

MMBFJ270_08

更新时间: 2024-09-30 04:14:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关
页数 文件大小 规格书
5页 414K
描述
P-Channel Switch

MMBFJ270_08 数据手册

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August 2008  
MMBFJ270  
P-Channel Switch  
Features  
This device is designed for low level analog switching sample and hold  
circuits and chopper stabilized amplifiers.  
G
Sourced from process 88.  
S
D
SOT-23  
Mark : 61S  
Absolute Maximum Ratings (Note1)  
Symbol Parameter  
T = 25°C unless otherwise noted  
a
Value  
-30  
Units  
V
VDG  
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
VGS  
30  
V
IGF  
50  
mA  
°C  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 ~ 150  
Note1 : These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.  
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Total Device Dissipation  
Derate above 25°C  
225  
1.8  
mW  
mW/°C  
RθJA  
Thermal Resistance, Junction to Ambient (Note2)  
556  
°C/W  
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
MIN  
MAX  
Units  
Off Characteristics (Note3)  
V(BR)GSS  
IGSS  
Gate-Source Breakdwon Voltage  
Gate Reverse Current  
IG = 1.0µA, VDS = 0  
30  
V
pA  
V
VGS = 20V, VDS = 0  
200  
2.0  
VGS(off)  
Gate-Source Cutoff Voltage  
VDS = -15V, ID = -1.0nA  
0.5  
On Characteristics (Note3)  
IDSS  
gfs  
Zero-Gate Voltage Drain Current * VDS = -15V, VGS = 0  
-2.0  
-15  
15000  
200  
mA  
Forward Transferconductance  
VGS = 0V, VDS = 15V, f = 1.0kHz  
6000  
µmhos  
µmhos  
goss  
Common- Source Output Conduc- VGS = 0V, VDS = 15V, f = 1.0kHz  
tance  
Note3 : Short duration test pulse used to minimize self-heating effect.  
© 2008 Fairchild Semiconductor Corporation  
MMBFJ270 Rev. B  
www.fairchildsemi.com  
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