Datasheet > MMBFJ211

MMBFJ211

更新时间： 2024-01-22 19:47:10

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		射频放大器
页数	文件大小	规格书
6页	199K
描述
N-Channel RF Amplifier

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中文翻译

获取价格

技术参数
数据手册
替代型号

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MMBFJ211 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.64	FET 技术：	JUNCTION
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.35 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

MMBFJ211 数据手册

MMBFJ210

MMBFJ211

MMBFJ212

J210

J211

J212

TO-92

SOT-23

Mark: 62V / 62W / 62X

NOTE: Source & Drain

are interchangeable

N-Channel RF Amplifier

This device is designed for HF/VHF mixer/amplifier and

applications where Process 50 is not adequate. Sufficient

gain and low noise for sensitive receivers. Sourced from

Process 90.

Absolute Maximum Ratings*

TA= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_DG

Drain-Gate Voltage

- 25

V_GS

Gate-Source Voltage

I_GF

Forward Gate Current

Operating and Storage Junction Temperature Range

-55 to +150

T_J,T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA= 25°C unless otherwise noted

Max

Symbol

Characteristic

Units

J210-212

*MMBFJ210-212

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

350

2.8

125

225

1.8

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

357

556

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

J210/J211/J212/MMBFJ210/J211/J212, Rev A

12 3 4 5 6

中文翻译

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MMBFJ211 替代型号

型号	品牌	替代类型	描述	数据表
SST5485-E3	VISHAY	功能相似	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, TO-236, 3 PIN, FET RF

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