是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-220AB |
包装说明: | TO-220, 3 PIN | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.14 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 60 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 750 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 50 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 1 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJE801TLEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
MJE802 | STMICROELECTRONICS |
获取价格 |
SILICON NPN POWER DARLINGTON TRANSISTORS | |
MJE802 | FAIRCHILD |
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Monolithic Construction With Built-in Base- Emitter Resistors | |
MJE802 | MOTOROLA |
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4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT | |
MJE802 | ONSEMI |
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DARLINGTON POWER TRANSISTORS COMPLEMENTARY | |
MJE802 | ISC |
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Silicon NPN Power Transistors | |
MJE802 | SAVANTIC |
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Silicon NPN Power Transistors | |
MJE802 | ASI |
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Transistor | |
MJE802 | ROCHESTER |
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4A, 80V, NPN, Si, POWER TRANSISTOR, TO-225, PLASTIC, CASE 77-09, 3 PIN | |
MJE802 | CENTRAL |
获取价格 |
4A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington |