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MJE801T

更新时间： 2024-11-27 14:54:43
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
18页 509K
描述
4A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

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中文翻译

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MJE801T 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：TO-220AB
包装说明：TO-220, 3 PIN针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.14
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：4 A集电极-发射极最大电压：60 V
配置：DARLINGTON最小直流电流增益 (hFE)：750
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：50 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：1 MHz
Base Number Matches：1

MJE801T 数据手册

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MJE700T THRU MJE703T PNP  
MJE800T THRU MJE803T NPN  
www.centralsemi.com  
COMPLEMENTARY  
POWER DARLINGTON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MJE700T, MJE800T  
series devices are medium power complementary  
silicon Darlington transistors designed for audio amplifier  
applications as complementary output devices.  
MARKING: FULL PART NUMBER  
TO-220 CASE  
MJE700T  
MJE701T  
MJE800T  
MJE801T  
60  
MJE702T  
MJE703T  
MJE802T  
MJE803T  
80  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
C
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
80  
V
V
5.0  
4.0  
100  
50  
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
I
A
C
I
mA  
W
B
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
2.5  
°C  
J
stg  
Θ
°C/W  
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
V
V
V
V
=Rated V  
=Rated V  
=Rated V  
=5.0V  
100  
500  
100  
2.0  
μA  
CBO  
CBO  
CEO  
EBO  
CB  
CB  
CE  
EB  
CBO  
CBO  
CEO  
, T =100°C  
μA  
μA  
mA  
V
C
BV  
I =50mA (MJE702T,703T,802T,803T)  
80  
60  
CEO  
CEO  
C
BV  
I =50mA (MJE700T,701T,800T,801T)  
V
C
V
V
V
V
V
V
I =1.5A, I =30mA (MJE700T,702T,800T,802T)  
2.5  
2.8  
3.0  
2.5  
2.5  
3.0  
V
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
BE(ON)  
FE  
C
B
I =2.0A, I =40mA (MJE701T,703T,801T,803T)  
V
C
B
I =4.0A, I =40mA  
V
C
B
V
=3.0V, I =1.5A (MJE700T,702T,800T,802T)  
V
CE  
CE  
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
V
V
=3.0V, I =2.0A (MJE701T,703T,801T,803T)  
V
C
=3.0V, I =4.0A  
V
C
h
h
h
=3.0V, I =1.5A (MJE700T,702T,800T,802T)  
750  
750  
100  
1.0  
C
=3.0V, I =2.0A (MJE701T,703T,801T,803T)  
FE  
C
=3.0V, I =4.0A  
FE  
C
f
=3.0V, I =1.5A, f=1.0MHz  
MHz  
T
C
R1 (23-January 2014)  
1234567...18

中文翻译

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