5秒后页面跳转
捷配首页

Datasheet > MJE803
MJE803 PDF预览

MJE803

更新时间： 2024-11-04 14:53:07
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
18页 502K
描述
4A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

阅读下载

中文翻译

获取价格

MJE803 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active包装说明：,
Reach Compliance Code：not_compliant风险等级：5.15
Is Samacsys：NJESD-609代码：e0
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

MJE803 数据手册

 浏览型号MJE803的Datasheet PDF文件第2页浏览型号MJE803的Datasheet PDF文件第3页浏览型号MJE803的Datasheet PDF文件第4页浏览型号MJE803的Datasheet PDF文件第5页浏览型号MJE803的Datasheet PDF文件第6页浏览型号MJE803的Datasheet PDF文件第7页 
MJE700 THRU MJE703 PNP  
MJE800 THRU MJE803 NPN  
www.centralsemi.com  
COMPLEMENTARY  
POWER DARLINGTON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MJE700, MJE800  
series devices are medium power complementary  
silicon Darlington transistors designed for audio amplifier  
applications as complementary output devices.  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MJE700  
MJE701  
MJE800  
MJE801  
60  
MJE702  
MJE703  
MJE802  
MJE803  
80  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
C
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
80  
V
V
5.0  
4.0  
100  
40  
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
I
A
C
I
mA  
W
B
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
3.13  
°C  
J
stg  
Θ
°C/W  
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
V
V
V
V
=Rated V  
=Rated V  
=Rated V  
=5.0V  
100  
μA  
CBO  
CBO  
CEO  
EBO  
CB  
CB  
CE  
EB  
CBO  
CBO  
CEO  
, T =100°C  
500  
100  
2.0  
μA  
μA  
mA  
V
C
BV  
I =50mA (MJE702,703,802,803)  
80  
60  
CEO  
CEO  
C
BV  
I =50mA (MJE700,701,800,801)  
V
C
V
V
V
V
V
V
I =1.5A, I =30mA (MJE700,702,800,802)  
2.5  
2.8  
3.0  
2.5  
2.5  
3.0  
V
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
BE(ON)  
FE  
C
B
I =2.0A, I =40mA (MJE701,703,801,803)  
V
C
B
I =4.0A, I =40mA  
V
C
B
V
=3.0V, I =1.5A (MJE700,702,800,802)  
V
CE  
CE  
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
V
V
=3.0V, I =2.0A (MJE701,703,801,803)  
V
C
=3.0V, I =4.0A  
V
C
h
h
h
=3.0V, I =1.5A (MJE700,702,800,802) 750  
C
=3.0V, I =2.0A (MJE701,703,801,803) 750  
FE  
C
=3.0V, I =4.0A  
100  
1.0  
FE  
C
f
=3.0V, I =1.5A, f=1.0MHz  
MHz  
T
C
R2 (23-January 2014)  
1234567...18

中文翻译

下载PDF

MJE803 替代型号

型号 品牌 替代类型 描述 数据表
MJE803T CENTRAL

功能相似

 4A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
MJE803G ONSEMI

功能相似

 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

与MJE803相关器件

型号 品牌 获取价格 描述 数据表
MJE803G ONSEMI

获取价格

 		4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE803STU FAIRCHILD

获取价格

 		Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
MJE803T ISC

获取价格

 		isc Silicon NPN Darlington Power Transistor
MJE803T MOSPEC

获取价格

 		POWER TRANSISTORS(4.0A,60-80V,40W)
MJE803T CENTRAL

获取价格

 		4A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
MJE803T NJSEMI

获取价格

 		Trans Darlington NPN 80V 4A 3-Pin(3+Tab) TO-220 Box
MJE8500 ISC

获取价格

 		Silicon NPN Power Transistor
MJE850016 MOTOROLA

获取价格

 		Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
MJE850016A MOTOROLA

获取价格

 		Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
MJE8500A MOTOROLA

获取价格

 		2.5A, 700V, NPN, Si, POWER TRANSISTOR, TO-220AB

与MJE803相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证