捷配首页

Datasheet > 晶体管 > 功率双极晶体管> MJE802STU
MJE802STU PDF预览

MJE802STU

更新时间： 2025-09-21 13:11:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
4页 54K
描述
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-126, 3 PIN

阅读下载

中文翻译

获取价格

MJE802STU 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SIP包装说明：LEAD FREE, TO-126, 3 PIN
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.63
其他特性：BUILT IN BIAS RESISTANCE RATIO IS 0.06最大集电极电流 (IC)：4 A
集电极-发射极最大电压：80 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：750JEDEC-95代码：TO-126
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：40 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICONBase Number Matches：1

MJE802STU 数据手册

 浏览型号MJE802STU的Datasheet PDF文件第2页浏览型号MJE802STU的Datasheet PDF文件第3页浏览型号MJE802STU的Datasheet PDF文件第4页 
MJE800/801/802/803  
Monolithic Construction With Built-in Base-  
Emitter Resistors  
FE C  
Complement to MJE700/701/702/703  
•
•
High DC Current Gain : h = 750 (Min.) @ I = 1.5 and 2.0A DC  
TO-126  
1
1. Emitter 2.Collector 3.Base  
NPN Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
Equivalent Circuit  
C
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector- Base Voltage  
: MJE800/801  
: MJE802/803  
60  
80  
V
V
CBO  
B
Collector-Emitter Voltage  
: MJE800/801  
: MJE802/803  
60  
80  
V
V
CEO  
V
Emitter-Base Voltage  
Collector Current  
Base Current  
5
V
A
EBO  
I
I
4
0.1  
C
R1  
R2  
A
B
P
Collector Dissipation (T =25°C)  
40  
W
E
R1 10 k Ω  
R2 0.6 k Ω  
C
C
T
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
J
T
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
I = 50mA, I = 0  
C
Min.  
Max. Units  
BV  
Collector-Emitter Breakdown Voltage  
: MJE800/801  
CEO  
B
60  
80  
V
V
: MJE802/803  
I
I
I
Collector Cut-off Current  
: MJE800/801  
CEO  
V
V
= 60V, I = 0  
100  
100  
µA  
µA  
CE  
CE  
B
: MJE802/803  
= 80V, I = 0  
B
Collector Cut-off Current  
V
V
= Rated BV  
= Rated BV  
, I = 0  
100  
500  
µA  
µA  
CBO  
CB  
CEO  
CEO  
E
, I = 0  
CB  
E
T
= 100°C  
C
Emitter Cut-off Current  
V
= 5V, I = 0  
2
mA  
EBO  
BE  
C
h
DC Current Gain : MJE800/802  
: MJE801/803  
V
V
V
= 3V, I = 1.5A  
750  
750  
100  
FE  
CE  
CE  
CE  
C
= 3V, I = 2A  
C
: ALL DEVICES  
= 3V, I = 4A  
C
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
: MJE800/802  
CE  
I
I
I
= 1.5A, I = 30mA  
2.5  
2.8  
3
V
V
V
C
C
C
B
: MJE801/803  
: ALL DEVICES  
= 2A, I = 40mA  
B
= 4A, I = 40mA  
B
V
Base-Emitter ON Voltage  
: MJE800/802  
BE  
V
V
V
= 3V, I = 1.5A  
2.5  
2.5  
3
V
V
V
CE  
CE  
CE  
C
: MJE801/803  
: ALL DEVICES  
= 3V, I = 2A  
C
= 3V, I = 4A  
C
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  
1234

中文翻译

下载PDF

MJE802STU 替代型号

型号 品牌 替代类型 描述 数据表
BD679 STMICROELECTRONICS

功能相似

 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BD679G ONSEMI

功能相似

 Plastic Medium−Power Silicon NPN Darlingtons
MJE802G ONSEMI

功能相似

 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

与MJE802STU相关器件

型号 品牌 获取价格 描述 数据表
MJE802T CENTRAL

获取价格

 		4A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
MJE802T MOSPEC

获取价格

 		POWER TRANSISTORS(4.0A,60-80V,40W)
MJE802T ISC

获取价格

 		isc Silicon NPN Darlington Power Transistor
MJE802T NJSEMI

获取价格

 		Trans Darlington NPN 80V 4A 3-Pin(3+Tab) TO-220 Box
MJE802_03 STMICROELECTRONICS

获取价格

 		SILICON NPN POWER DARLINGTON TRANSISTOR
MJE803 MOTOROLA

获取价格

 		4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE803 CENTRAL

获取价格

 		4A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
MJE803 ISC

获取价格

 		Silicon NPN Power Transistors
MJE803 SAVANTIC

获取价格

 		Silicon NPN Power Transistors
MJE803 STMICROELECTRONICS

获取价格

 		SILICON NPN POWER DARLINGTON TRANSISTORS

与MJE802STU相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2025 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证