Datasheet > MJE803

MJE803

更新时间： 2024-11-26 10:55:43

品牌	Logo	应用领域
SAVANTIC		晶体晶体管局域网
页数	文件大小	规格书
3页	103K
描述
Silicon NPN Power Transistors

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MJE803 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

MJE800/801/802/803

DESCRIPTION

·With TO-126 package

·Complement to type MJE700/701/702/703

·High DC current gain

·DARLINGTON

APPLICATIONS

·Designed for general–purpose amplifier

and low–speed switching applications

PINNING (see Fig.2)

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

ABSOLUTE MAXIMUM RATINGS(T_C=25ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

MJE800/801

MJE802/803

MJE800/801

MJE802/803

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

Emitter-base voltage

Collector current

Open collector

ꢀ

I_B

Base current

0.1

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

-55~150

ꢀ

T_stg

12 3

中文翻译

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与MJE803相关器件

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MJE803G	ONSEMI	获取价格	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE803STU	FAIRCHILD	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
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MJE803T	NJSEMI	获取价格	Trans Darlington NPN 80V 4A 3-Pin(3+Tab) TO-220 Box
MJE8500	ISC	获取价格	Silicon NPN Power Transistor
MJE850016	MOTOROLA	获取价格	Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
MJE850016A	MOTOROLA	获取价格	Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
MJE8500A	MOTOROLA	获取价格	2.5A, 700V, NPN, Si, POWER TRANSISTOR, TO-220AB