生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.15 | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 80 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-225AA |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 40 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 1 MHz |
VCEsat-Max: | 3 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJE803G | ONSEMI |
获取价格 |
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT | |
MJE803STU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
MJE803T | ISC |
获取价格 |
isc Silicon NPN Darlington Power Transistor | |
MJE803T | MOSPEC |
获取价格 |
POWER TRANSISTORS(4.0A,60-80V,40W) | |
MJE803T | CENTRAL |
获取价格 |
4A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | |
MJE803T | NJSEMI |
获取价格 |
Trans Darlington NPN 80V 4A 3-Pin(3+Tab) TO-220 Box | |
MJE8500 | ISC |
获取价格 |
Silicon NPN Power Transistor | |
MJE850016 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
MJE850016A | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
MJE8500A | MOTOROLA |
获取价格 |
2.5A, 700V, NPN, Si, POWER TRANSISTOR, TO-220AB |