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MJE803T PDF预览

MJE803T

更新时间: 2024-11-02 22:33:07
品牌 Logo 应用领域
统懋 - MOSPEC 晶体晶体管
页数 文件大小 规格书
4页 198K
描述
POWER TRANSISTORS(4.0A,60-80V,40W)

MJE803T 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.27
最大集电极电流 (IC):4 A配置:DARLINGTON
最小直流电流增益 (hFE):100最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):50 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

MJE803T 数据手册

 浏览型号MJE803T的Datasheet PDF文件第2页浏览型号MJE803T的Datasheet PDF文件第3页浏览型号MJE803T的Datasheet PDF文件第4页 
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MJE8500AF MOTOROLA

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Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
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Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
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Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
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Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
MJE8500N MOTOROLA

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2.5A, 700V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE8500S MOTOROLA

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2.5A, 700V, NPN, Si, POWER TRANSISTOR, TO-220AB