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MJE802T PDF预览

MJE802T

更新时间: 2024-11-26 10:55:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
2页 100K
描述
isc Silicon NPN Darlington Power Transistor

MJE802T 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

MJE802T 数据手册

 浏览型号MJE802T的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
MJE800T  
DESCRIPTION  
·Collector–Emitter Breakdown Voltage—  
: V(BR)CEO = 60 V  
·DC Current Gain—  
: hFE = 750(Min) @ IC= 2A  
·Complement to Type MJE700T  
APPLICATIONS  
·Designed for general-purpose amplifier and low-speed  
switching applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Base Current  
VALUE  
UNIT  
V
60  
60  
V
5
V
4
A
IB  
0.1  
A
Collector Power Dissipation  
TC=25℃  
PC  
50  
W
Junction Temperature  
150  
-55~150  
Ti  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX UNIT  
2.5 /W  
Thermal Resistance, Junction to Case  
Rth j-c  
isc Websitewww.iscsemi.cn  

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