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MJE802_03 PDF预览

MJE802_03

更新时间: 2024-11-28 04:15:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管达林顿晶体管
页数 文件大小 规格书
4页 75K
描述
SILICON NPN POWER DARLINGTON TRANSISTOR

MJE802_03 数据手册

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MJE802  
®
SILICON NPN POWER DARLINGTON TRANSISTOR  
STMicroelectronics PREFERRED  
SALESTYPE  
NPN DARLINGTON  
APPLICATIONS  
GENERAL PURPOSE SWITCHING  
DESCRIPTION  
The MJE802 is a silicon Epitaxial-Base NPN  
transistor in monolithic Darlington configuration,  
mounted in Jedec SOT-32 plastic package. It is  
intended for use in medium power linear and  
switching applications.  
1
2
3
SOT-32  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
VCBO  
VCEO  
VEBO  
IC  
80  
V
V
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Base-Emitter Voltage (IC = 0)  
Collector Current  
80  
5
V
4
0.1  
A
IB  
A
Base Current  
o
Ptot  
Tstg  
Tj  
40  
W
oC  
oC  
Total Power Dissipation at Tcase 25 C  
Storage Temperature  
-65 to 150  
150  
Max Operating Junction Temperature  
1/4  
September 2003  

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