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MJE802 PDF预览

MJE802

更新时间: 2024-11-27 14:53:07
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
18页 502K
描述
4A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

MJE802 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:,
Reach Compliance Code:not_compliant风险等级:5.15
JESD-609代码:e0端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

MJE802 数据手册

 浏览型号MJE802的Datasheet PDF文件第2页浏览型号MJE802的Datasheet PDF文件第3页浏览型号MJE802的Datasheet PDF文件第4页浏览型号MJE802的Datasheet PDF文件第5页浏览型号MJE802的Datasheet PDF文件第6页浏览型号MJE802的Datasheet PDF文件第7页 
MJE700 THRU MJE703 PNP  
MJE800 THRU MJE803 NPN  
www.centralsemi.com  
COMPLEMENTARY  
POWER DARLINGTON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MJE700, MJE800  
series devices are medium power complementary  
silicon Darlington transistors designed for audio amplifier  
applications as complementary output devices.  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MJE700  
MJE701  
MJE800  
MJE801  
60  
MJE702  
MJE703  
MJE802  
MJE803  
80  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
C
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
80  
V
V
5.0  
4.0  
100  
40  
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
I
A
C
I
mA  
W
B
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
3.13  
°C  
J
stg  
Θ
°C/W  
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
V
V
V
V
=Rated V  
=Rated V  
=Rated V  
=5.0V  
100  
μA  
CBO  
CBO  
CEO  
EBO  
CB  
CB  
CE  
EB  
CBO  
CBO  
CEO  
, T =100°C  
500  
100  
2.0  
μA  
μA  
mA  
V
C
BV  
I =50mA (MJE702,703,802,803)  
80  
60  
CEO  
CEO  
C
BV  
I =50mA (MJE700,701,800,801)  
V
C
V
V
V
V
V
V
I =1.5A, I =30mA (MJE700,702,800,802)  
2.5  
2.8  
3.0  
2.5  
2.5  
3.0  
V
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
BE(ON)  
FE  
C
B
I =2.0A, I =40mA (MJE701,703,801,803)  
V
C
B
I =4.0A, I =40mA  
V
C
B
V
=3.0V, I =1.5A (MJE700,702,800,802)  
V
CE  
CE  
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
V
V
=3.0V, I =2.0A (MJE701,703,801,803)  
V
C
=3.0V, I =4.0A  
V
C
h
h
h
=3.0V, I =1.5A (MJE700,702,800,802) 750  
C
=3.0V, I =2.0A (MJE701,703,801,803) 750  
FE  
C
=3.0V, I =4.0A  
100  
1.0  
FE  
C
f
=3.0V, I =1.5A, f=1.0MHz  
MHz  
T
C
R2 (23-January 2014)  

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