5秒后页面跳转
MJE802 PDF预览

MJE802

更新时间: 2024-11-02 22:33:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
6页 259K
描述
DARLINGTON POWER TRANSISTORS COMPLEMENTARY

MJE802 技术参数

是否无铅: 含铅生命周期:Obsolete
包装说明:PLASTIC, CASE 77-09, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.13Is Samacsys:N
最大集电极电流 (IC):4 A集电极-发射极最大电压:80 V
配置:DARLINGTON最小直流电流增益 (hFE):750
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:40 W
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):2 MHz
VCEsat-Max:2.5 VBase Number Matches:1

MJE802 数据手册

 浏览型号MJE802的Datasheet PDF文件第2页浏览型号MJE802的Datasheet PDF文件第3页浏览型号MJE802的Datasheet PDF文件第4页浏览型号MJE802的Datasheet PDF文件第5页浏览型号MJE802的Datasheet PDF文件第6页 
Order this document  
by MJE700/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low–speed switching applications.  
High DC Current Gain —  
= 2000 (Typ) @ I = 2.0 Adc  
Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage  
Multiplication  
h
FE  
C
Choice of Packages —  
MJE700 and MJE800 series  
T0220AB, MJE700T and MJE800T  
MAXIMUM RATINGS  
4.0 AMPERE  
DARLINGTON  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
MJE702  
MJE703  
MJE802  
MJE803  
MJE700,T  
MJE800,T  
Rating  
Symbol  
Unit  
Collector–Emitter Voltage  
V
CEO  
60  
60  
80  
80  
Vdc  
40 WATT  
50 WATT  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
V
CB  
Vdc  
Vdc  
Adc  
Adc  
V
EB  
5.0  
4.0  
0.1  
I
C
Base Current  
I
B
CASE 77  
TO–220  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
40  
0.32  
50  
0.40  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
stg  
55 to +150  
C
J
CASE 77–08  
TO–225AA TYPE  
MJE700703  
MJE800803  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
C/W  
θJC  
CASE 77  
TO–220  
3.13  
2.50  
50  
40  
30  
20  
TO–220AB  
TO–126  
CASE 221A–06  
TO–220AB  
MJE700T  
10  
0
MJE800T  
25  
50  
75  
100  
125  
150  
T
, CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
REV 3  
Motorola, Inc. 1995

MJE802 替代型号

型号 品牌 替代类型 描述 数据表
MJE802G ONSEMI

类似代替

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
BD679A STMICROELECTRONICS

功能相似

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BD679 STMICROELECTRONICS

功能相似

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

与MJE802相关器件

型号 品牌 获取价格 描述 数据表
MJE802_03 STMICROELECTRONICS

获取价格

SILICON NPN POWER DARLINGTON TRANSISTOR
MJE802F NJSEMI

获取价格

Trans Darlington NPN 80V 4A 3-Pin(3+Tab) TO-220 Box
MJE802G ONSEMI

获取价格

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE802G ROCHESTER

获取价格

4A, 80V, NPN, Si, POWER TRANSISTOR, TO-225, LEAD FREE, PLASTIC, CASE 77-09, 3 PIN
MJE802LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
MJE802STU FAIRCHILD

获取价格

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
MJE802T ISC

获取价格

isc Silicon NPN Darlington Power Transistor
MJE802T MOSPEC

获取价格

POWER TRANSISTORS(4.0A,60-80V,40W)
MJE802T CENTRAL

获取价格

4A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
MJE802T NJSEMI

获取价格

Trans Darlington NPN 80V 4A 3-Pin(3+Tab) TO-220 Box