是否无铅: | 含铅 | 生命周期: | Obsolete |
包装说明: | PLASTIC, CASE 77-09, 3 PIN | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.13 | Is Samacsys: | N |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 80 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 750 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 功耗环境最大值: | 40 W |
最大功率耗散 (Abs): | 40 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 2 MHz |
VCEsat-Max: | 2.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJE802G | ONSEMI |
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