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MJE802

更新时间： 2024-11-02 22:33:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
4页 54K
描述
Monolithic Construction With Built-in Base- Emitter Resistors

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中文翻译

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MJE802 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SIP包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.15
其他特性：BUILT IN BIAS RESISTANCE RATIO IS 0.06外壳连接：ISOLATED
最大集电极电流 (IC)：4 A集电极-发射极最大电压：80 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：750
JEDEC-95代码：TO-126JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：40 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
Base Number Matches：1

MJE802 数据手册

 浏览型号MJE802的Datasheet PDF文件第2页浏览型号MJE802的Datasheet PDF文件第3页浏览型号MJE802的Datasheet PDF文件第4页 
MJE800/801/802/803  
Monolithic Construction With Built-in Base-  
Emitter Resistors  
FE C  
Complement to MJE700/701/702/703  
•
•
High DC Current Gain : h = 750 (Min.) @ I = 1.5 and 2.0A DC  
TO-126  
1
1. Emitter 2.Collector 3.Base  
NPN Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
Equivalent Circuit  
C
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector- Base Voltage  
: MJE800/801  
: MJE802/803  
60  
80  
V
V
CBO  
B
Collector-Emitter Voltage  
: MJE800/801  
: MJE802/803  
60  
80  
V
V
CEO  
V
Emitter-Base Voltage  
Collector Current  
Base Current  
5
V
A
EBO  
I
I
4
0.1  
C
R1  
R2  
A
B
P
Collector Dissipation (T =25°C)  
40  
W
E
R1 10 k Ω  
R2 0.6 k Ω  
C
C
T
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
J
T
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
I = 50mA, I = 0  
C
Min.  
Max. Units  
BV  
Collector-Emitter Breakdown Voltage  
: MJE800/801  
CEO  
B
60  
80  
V
V
: MJE802/803  
I
I
I
Collector Cut-off Current  
: MJE800/801  
CEO  
V
V
= 60V, I = 0  
100  
100  
µA  
µA  
CE  
CE  
B
: MJE802/803  
= 80V, I = 0  
B
Collector Cut-off Current  
V
V
= Rated BV  
= Rated BV  
, I = 0  
100  
500  
µA  
µA  
CBO  
CB  
CEO  
CEO  
E
, I = 0  
CB  
E
T
= 100°C  
C
Emitter Cut-off Current  
V
= 5V, I = 0  
2
mA  
EBO  
BE  
C
h
DC Current Gain : MJE800/802  
: MJE801/803  
V
V
V
= 3V, I = 1.5A  
750  
750  
100  
FE  
CE  
CE  
CE  
C
= 3V, I = 2A  
C
: ALL DEVICES  
= 3V, I = 4A  
C
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
: MJE800/802  
CE  
I
I
I
= 1.5A, I = 30mA  
2.5  
2.8  
3
V
V
V
C
C
C
B
: MJE801/803  
: ALL DEVICES  
= 2A, I = 40mA  
B
= 4A, I = 40mA  
B
V
Base-Emitter ON Voltage  
: MJE800/802  
BE  
V
V
V
= 3V, I = 1.5A  
2.5  
2.5  
3
V
V
V
CE  
CE  
CE  
C
: MJE801/803  
: ALL DEVICES  
= 3V, I = 2A  
C
= 3V, I = 4A  
C
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  
1234

中文翻译

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