MJE801T

更新时间： 2024-11-03 10:55:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	100K
描述
isc Silicon NPN Darlington Power Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MJE801T 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Is Samacsys：	N	Base Number Matches：	1

MJE801T 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

MJE801T

DESCRIPTION

·Collector–Emitter Breakdown Voltage—

: V_(BR)CEO= 60 V

·DC Current Gain—

: h_FE= 750(Min) @ I_C= 2A

·Complement to Type MJE701T

APPLICATIONS

·Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current

VALUE

UNIT

I_B

0.1

Collector Power Dissipation

T_C=25℃

P_C

℃

Junction Temperature

150

-55~150

T_i

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

2.5 ℃/W

Thermal Resistance, Junction to Case

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

下载PDF

与MJE801T相关器件

型号	品牌	获取价格	描述	数据表
MJE801TLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
MJE802	STMICROELECTRONICS	获取价格	SILICON NPN POWER DARLINGTON TRANSISTORS
MJE802	FAIRCHILD	获取价格	Monolithic Construction With Built-in Base- Emitter Resistors
MJE802	MOTOROLA	获取价格	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE802	ONSEMI	获取价格	DARLINGTON POWER TRANSISTORS COMPLEMENTARY
MJE802	ISC	获取价格	Silicon NPN Power Transistors
MJE802	SAVANTIC	获取价格	Silicon NPN Power Transistors
MJE802	ASI	获取价格	Transistor
MJE802	ROCHESTER	获取价格	4A, 80V, NPN, Si, POWER TRANSISTOR, TO-225, PLASTIC, CASE 77-09, 3 PIN
MJE802	CENTRAL	获取价格	4A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington