MJE801T

更新时间： 2024-11-26 10:55:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	100K
描述
isc Silicon NPN Darlington Power Transistor

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中文翻译

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技术参数
数据手册

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MJE801T 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Is Samacsys：	N	Base Number Matches：	1

MJE801T 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

MJE801T

DESCRIPTION

·Collector–Emitter Breakdown Voltage—

: V_(BR)CEO= 60 V

·DC Current Gain—

: h_FE= 750(Min) @ I_C= 2A

·Complement to Type MJE701T

APPLICATIONS

·Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current

VALUE

UNIT

I_B

0.1

Collector Power Dissipation

T_C=25℃

P_C

℃

Junction Temperature

150

-55~150

T_i

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

2.5 ℃/W

Thermal Resistance, Junction to Case

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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