MJE801

更新时间： 2025-09-20 22:33:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	54K
描述
Monolithic Construction With Built-in Base- Emitter Resistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MJE801 数据手册

MJE800/801/802/803

Monolithic Construction With Built-in Base-

Emitter Resistors

FE C

Complement to MJE700/701/702/703

•

High DC Current Gain : h = 750 (Min.) @ I = 1.5 and 2.0A DC

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Equivalent Circuit

Symbol

Parameter

Value

Units

Collector- Base Voltage

: MJE800/801

: MJE802/803

CBO

Collector-Emitter Voltage

: MJE800/801

: MJE802/803

CEO

Emitter-Base Voltage

Collector Current

Base Current

EBO

0.1

Collector Dissipation (T =25°C)

R1 10 k Ω

R2 0.6 k Ω

Junction Temperature

Storage Temperature

150

°C

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

I = 50mA, I = 0

Min.

Max. Units

Collector-Emitter Breakdown Voltage

: MJE800/801

CEO

: MJE802/803

Collector Cut-off Current

: MJE800/801

CEO

= 60V, I = 0

100

µA

: MJE802/803

= 80V, I = 0

Collector Cut-off Current

= Rated BV

, I = 0

100

500

µA

CBO

CEO

, I = 0

= 100°C

Emitter Cut-off Current

= 5V, I = 0

EBO

DC Current Gain : MJE800/802

: MJE801/803

= 3V, I = 1.5A

750

100

= 3V, I = 2A

: ALL DEVICES

= 3V, I = 4A

(sat)

(on)

Collector-Emitter Saturation Voltage

: MJE800/802

= 1.5A, I = 30mA

2.5

2.8

: MJE801/803

: ALL DEVICES

= 2A, I = 40mA

= 4A, I = 40mA

Base-Emitter ON Voltage

: MJE800/802

= 3V, I = 1.5A

2.5

: MJE801/803

: ALL DEVICES

= 3V, I = 2A

= 3V, I = 4A

Rev. A1, February 2001

12 3 4

中文翻译

下载PDF

与MJE801相关器件

型号	品牌	获取价格	描述	数据表
MJE801LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
MJE801STU	FAIRCHILD	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
MJE801STU	ONSEMI	获取价格	元器件封装:TO-126-3;
MJE801T	CENTRAL	获取价格	4A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
MJE801T	MOSPEC	获取价格	POWER TRANSISTORS(4.0A,60-80V,40W)
MJE801T	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
MJE801T	NJSEMI	获取价格	Trans Darlington NPN 60V 4A 3-Pin(3+Tab) TO-220 Box
MJE801TLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
MJE802	ASI	获取价格	Transistor
MJE802	MOTOROLA	获取价格	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT