MJE801

更新时间： 2024-11-02 22:33:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	54K
描述
Monolithic Construction With Built-in Base- Emitter Resistors

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MJE801 数据手册

MJE800/801/802/803

Monolithic Construction With Built-in Base-

Emitter Resistors

FE C

Complement to MJE700/701/702/703

•

High DC Current Gain : h = 750 (Min.) @ I = 1.5 and 2.0A DC

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Equivalent Circuit

Symbol

Parameter

Value

Units

Collector- Base Voltage

: MJE800/801

: MJE802/803

CBO

Collector-Emitter Voltage

: MJE800/801

: MJE802/803

CEO

Emitter-Base Voltage

Collector Current

Base Current

EBO

0.1

Collector Dissipation (T =25°C)

R1 10 k Ω

R2 0.6 k Ω

Junction Temperature

Storage Temperature

150

°C

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

I = 50mA, I = 0

Min.

Max. Units

Collector-Emitter Breakdown Voltage

: MJE800/801

CEO

: MJE802/803

Collector Cut-off Current

: MJE800/801

CEO

= 60V, I = 0

100

µA

: MJE802/803

= 80V, I = 0

Collector Cut-off Current

= Rated BV

, I = 0

100

500

µA

CBO

CEO

, I = 0

= 100°C

Emitter Cut-off Current

= 5V, I = 0

EBO

DC Current Gain : MJE800/802

: MJE801/803

= 3V, I = 1.5A

750

100

= 3V, I = 2A

: ALL DEVICES

= 3V, I = 4A

(sat)

(on)

Collector-Emitter Saturation Voltage

: MJE800/802

= 1.5A, I = 30mA

2.5

2.8

: MJE801/803

: ALL DEVICES

= 2A, I = 40mA

= 4A, I = 40mA

Base-Emitter ON Voltage

: MJE800/802

= 3V, I = 1.5A

2.5

: MJE801/803

: ALL DEVICES

= 3V, I = 2A

= 3V, I = 4A

Rev. A1, February 2001

12 3 4

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