是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.65 |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 60 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 750 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 40 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BD677ASTU | FAIRCHILD |
类似代替 |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ |
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