5秒后页面跳转
MJE801STU PDF预览

MJE801STU

更新时间: 2024-11-03 12:59:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
4页 54K
描述
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

MJE801STU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.65
最大集电极电流 (IC):4 A集电极-发射极最大电压:60 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):750
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

MJE801STU 数据手册

 浏览型号MJE801STU的Datasheet PDF文件第2页浏览型号MJE801STU的Datasheet PDF文件第3页浏览型号MJE801STU的Datasheet PDF文件第4页 
MJE800/801/802/803  
Monolithic Construction With Built-in Base-  
Emitter Resistors  
FE C  
Complement to MJE700/701/702/703  
High DC Current Gain : h = 750 (Min.) @ I = 1.5 and 2.0A DC  
TO-126  
1
1. Emitter 2.Collector 3.Base  
NPN Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
Equivalent Circuit  
C
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector- Base Voltage  
: MJE800/801  
: MJE802/803  
60  
80  
V
V
CBO  
B
Collector-Emitter Voltage  
: MJE800/801  
: MJE802/803  
60  
80  
V
V
CEO  
V
Emitter-Base Voltage  
Collector Current  
Base Current  
5
V
A
EBO  
I
I
4
0.1  
C
R1  
R2  
A
B
P
Collector Dissipation (T =25°C)  
40  
W
E
R1 10 k  
R2 0.6 k Ω  
C
C
T
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
J
T
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
I = 50mA, I = 0  
C
Min.  
Max. Units  
BV  
Collector-Emitter Breakdown Voltage  
: MJE800/801  
CEO  
B
60  
80  
V
V
: MJE802/803  
I
I
I
Collector Cut-off Current  
: MJE800/801  
CEO  
V
V
= 60V, I = 0  
100  
100  
µA  
µA  
CE  
CE  
B
: MJE802/803  
= 80V, I = 0  
B
Collector Cut-off Current  
V
V
= Rated BV  
= Rated BV  
, I = 0  
100  
500  
µA  
µA  
CBO  
CB  
CEO  
CEO  
E
, I = 0  
CB  
E
T
= 100°C  
C
Emitter Cut-off Current  
V
= 5V, I = 0  
2
mA  
EBO  
BE  
C
h
DC Current Gain : MJE800/802  
: MJE801/803  
V
V
V
= 3V, I = 1.5A  
750  
750  
100  
FE  
CE  
CE  
CE  
C
= 3V, I = 2A  
C
: ALL DEVICES  
= 3V, I = 4A  
C
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
: MJE800/802  
CE  
I
I
I
= 1.5A, I = 30mA  
2.5  
2.8  
3
V
V
V
C
C
C
B
: MJE801/803  
: ALL DEVICES  
= 2A, I = 40mA  
B
= 4A, I = 40mA  
B
V
Base-Emitter ON Voltage  
: MJE800/802  
BE  
V
V
V
= 3V, I = 1.5A  
2.5  
2.5  
3
V
V
V
CE  
CE  
CE  
C
: MJE801/803  
: ALL DEVICES  
= 3V, I = 2A  
C
= 3V, I = 4A  
C
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  

MJE801STU 替代型号

型号 品牌 替代类型 描述 数据表
BD677ASTU FAIRCHILD

类似代替

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/

与MJE801STU相关器件

型号 品牌 获取价格 描述 数据表
MJE801T MOSPEC

获取价格

POWER TRANSISTORS(4.0A,60-80V,40W)
MJE801T ISC

获取价格

isc Silicon NPN Darlington Power Transistor
MJE801T CENTRAL

获取价格

4A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
MJE801T NJSEMI

获取价格

Trans Darlington NPN 60V 4A 3-Pin(3+Tab) TO-220 Box
MJE801TLEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
MJE802 STMICROELECTRONICS

获取价格

SILICON NPN POWER DARLINGTON TRANSISTORS
MJE802 FAIRCHILD

获取价格

Monolithic Construction With Built-in Base- Emitter Resistors
MJE802 MOTOROLA

获取价格

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE802 ONSEMI

获取价格

DARLINGTON POWER TRANSISTORS COMPLEMENTARY
MJE802 ISC

获取价格

Silicon NPN Power Transistors