MJE801

更新时间： 2024-11-03 10:55:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	40K
描述
Silicon NPN Power Transistors

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数据手册

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MJE801 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJE800/801/802/803

DESCRIPTION

·With TO-126 package

·Complement to type MJE700/701/702/703

·High DC current gain

·DARLINGTON

APPLICATIONS

·Designed for general–purpose amplifier

and low–speed switching applications

PINNING (see Fig.2)

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute Maximun Ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

MJE800/801

MJE802/803

MJE800/801

MJE802/803

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

Emitter-base voltage

Collector current

Open collector

I_B

Base current

0.1

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

150

-55~150

T_stg

12 3

中文翻译

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与MJE801相关器件

型号	品牌	获取价格	描述	数据表
MJE801LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
MJE801STU	FAIRCHILD	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
MJE801T	MOSPEC	获取价格	POWER TRANSISTORS(4.0A,60-80V,40W)
MJE801T	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
MJE801T	CENTRAL	获取价格	4A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
MJE801T	NJSEMI	获取价格	Trans Darlington NPN 60V 4A 3-Pin(3+Tab) TO-220 Box
MJE801TLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
MJE802	STMICROELECTRONICS	获取价格	SILICON NPN POWER DARLINGTON TRANSISTORS
MJE802	FAIRCHILD	获取价格	Monolithic Construction With Built-in Base- Emitter Resistors
MJE802	MOTOROLA	获取价格	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT