Datasheet > MDS1651

MDS1651

更新时间： 2024-11-19 01:17:11

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美格纳 - MGCHIP		/
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描述
Single N-Channel Trench MOSFET 30V, 11.6A, 17m(ohm)

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MDS1651 数据手册

MDS1651

Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ

General Description

Features

The MDS1651 uses advanced MagnaChip’s MOSFET

Technology, which provides low on-state resistance,

high switching performance and excellent reliability.

V_DS= 30V

I_D= 11.6A@V_GS= 10V

R_DS(ON)

< 17mΩ @V_GS= 10V

MDS1651 is suitable device for PWM, Load Switching

and general purpose applications.

< 22mΩ @V_GS= 4.5V

Applications

Portable application

5(D)

6(D)

7(D)

8(D)

4(G)

3(S)

2(S)

1(S)

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

Unit

Gate-Source Voltage

V_GSS

±20

11.6

9.2

T_C=25^oC

T_C=70^oC

Continuous Drain Current

Pulsed Drain Current

Power Dissipation ⁽¹⁾

I_D

I_DM

P_D

T_A=25^oC

T_A=70^oC

3.1

Single Pulse Avalanche Energy ⁽²⁾

E_AS

Junction and Storage Temperature Range

T_J, T_stg

-55~150

^oC

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

Unit

^oC/W

R_θJC

October 2008. Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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