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MDS1655URH PDF预览

MDS1655URH

更新时间: 2024-11-19 01:17:11
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 684K
描述
Single N-channel Trench MOSFET 30V, 11A, 17.5m(ohm)

MDS1655URH 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.76峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MDS1655URH 数据手册

 浏览型号MDS1655URH的Datasheet PDF文件第2页浏览型号MDS1655URH的Datasheet PDF文件第3页浏览型号MDS1655URH的Datasheet PDF文件第4页浏览型号MDS1655URH的Datasheet PDF文件第5页浏览型号MDS1655URH的Datasheet PDF文件第6页 
                                                                                                                                                             
March.ꢀ2009.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
                                                                                                                              
ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ  
<ꢀ17.5m  
<ꢀ25.0mꢀ  
                                                                                                                                                             
@VGSꢀ=ꢀ10Vꢀ  
@VGSꢀ=ꢀ4.5Vꢀ  
ꢀ ꢀ  
MDS1655ꢀꢀ  
ꢀ ꢀ ꢀ ꢀ SingleꢀNꢁchannelꢀTrenchꢀMOSFETꢀ30V,ꢀ11A,ꢀ17.5mꢂꢀ  
GeneralꢀDescriptionꢀ  
Featuresꢀ  
Theꢀ MDS1655ꢀ usesꢀ advancedꢀ MagnaChipsꢀ MOSFETꢀ  
Technology,whichprovideshighperformanceinonꢁstateꢀ  
resistance,ꢀ fastꢀ switchingꢀ performanceꢀ andꢀ excellentꢀ  
quality.ꢀ ꢀ MDS1655ꢀ isꢀ suitableꢀ deviceꢀ forꢀ DCꢁDCꢀ  
Convertersꢀandꢀgeneralꢀpurposeꢀapplications.ꢀ  
ꢀ  
ꢀ  
ꢀ  
VDSꢀ=ꢀ30Vꢀ  
IDꢀ=ꢀ11Aꢀ @VGSꢀ=ꢀ10Vꢀ  
RꢀDS(ON)  
Applicationsꢀ  
ꢀ  
DCꢁDCꢀConvertersꢀ  
5(D)ꢀ  
6(D)ꢀ  
7(D)ꢀ  
8(D)ꢀ  
G
4(G)ꢀ  
3(S)ꢀ  
2(S)ꢀ  
1(S)ꢀ  
AbsolouteꢀMaximunꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ  
Characteristicsꢀ  
Symbolꢀ  
VDSS  
VGSS  
Ratingꢀ  
30ꢀ  
Unitꢀ  
Vꢀ  
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ  
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ  
±20ꢀ  
11ꢀ  
Vꢀ  
ꢀ Ta=25oCꢀ  
ꢀ Ta=100oCꢀ  
Aꢀ  
ꢀ ꢀ ContinuousꢀDrainꢀCurrent)ꢀ(1)  
ꢀ ꢀ PulsedꢀDrainꢀCurrentꢀ  
ꢀ ꢀ PowerꢀDissipationꢀ  
IDꢀ  
6.9ꢀ  
Aꢀ  
IDM  
45ꢀ  
Aꢀ  
ꢀ Ta=25oCꢀ  
ꢀ Ta=100oCꢀ  
2.5ꢀ  
PDꢀ  
Wꢀ  
1.0ꢀ  
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy)ꢀ(2)  
EAS  
50ꢀ  
mJꢀ  
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ  
TJ,ꢀTstg  
ꢁ55~150ꢀ  
oC  
ThermalꢀCharacteristicsꢀ  
Characteristicsꢀ  
Symbolꢀ  
RθJA  
RθJC  
Ratingꢀ  
50ꢀ  
Unitꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient)ꢀ(1)  
oC/Wꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁCaseꢀ  
25ꢀ  
1ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.  

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