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MDS1754 PDF预览

MDS1754

更新时间: 2024-11-10 01:17:11
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 655K
描述
N-Channel Trench MOSFET, 40V, 7.6A, 29m(ohm)

MDS1754 数据手册

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Augustꢀ2008.ꢀVersion1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
                                                                                                                              
MDS1754ꢀ  
NꢁChannelꢀTrenchꢀMOSFET,ꢀ40V,ꢀ7.6A,ꢀ29mꢂꢀ  
Featuresꢀ  
GeneralꢀDescriptionꢀ  
ꢀ  
ꢀ  
ꢀ  
VDSꢀ=ꢀ40Vꢀ  
IDꢀ=ꢀ7.6ꢀ(VGSꢀ=ꢀ10V)ꢀ  
Theꢀ MDS1754ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ Trenchꢀ  
MOSFETꢀ Technologyꢀ toꢀ providedꢀ highꢀ performanceꢀ inꢀ  
onꢁstateꢀresistance,ꢀswitchingꢀperformanceꢀandꢀreliability.ꢀ  
RDS(ON)  
<ꢀ29mꢀ@VGSꢀ=ꢀ10Vꢀ  
<ꢀ37mꢀ@ꢀVGSꢀ=ꢀ4.5Vꢀ  
LowRDS(ON),LowGateChargecanbeofferingsuperiorꢀ  
benefitꢀinꢀtheꢀapplication.ꢀ  
Applicationsꢀ  
ꢀ  
ꢀ  
Invertersꢀ  
Generalꢀpurposeꢀapplicationsꢀ  
5(D)ꢀ  
6(D)ꢀ  
7(D)ꢀ  
8(D)ꢀ  
G
4(G)ꢀ  
3(S)ꢀ  
2(S)ꢀ  
1(S)ꢀ  
AbsoluteꢀMaximumꢀRatingsꢀ(TAꢀ=25oꢀunlessꢀotherwiseꢀnoted)ꢀ  
ꢀ ꢀ  
Characteristicsꢀ  
Symbolꢀ  
VDSS  
Ratingꢀ  
40ꢀ  
Unitꢀ  
Vꢀ  
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ  
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ  
ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ  
ꢀ ꢀ PulsedꢀDrainꢀCurrentꢀ  
ꢀ ꢀ PowerꢀDissipationꢀ  
VGSS  
IDꢀ  
±20ꢀ  
Vꢀ  
(Noteꢀ1)ꢀ  
7.6ꢀ  
Aꢀ  
IDM  
PDꢀ  
EAS  
TJ,ꢀTstg  
50ꢀ  
Aꢀ  
2.5ꢀ  
Wꢀ  
mJꢀ  
oCꢀ  
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergyꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ2)ꢀ  
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ  
18ꢀ  
ꢁ55~+150ꢀ  
ThermalꢀCharacteristicsꢀ  
Characteristicsꢀ  
Symbolꢀ  
RθJA  
RθJC  
Ratingꢀ  
50ꢀ  
Unitꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbientꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ1)ꢀ  
oC/Wꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁCaseꢀ  
25ꢀ  
1ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.  

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