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MDS1951URH PDF预览

MDS1951URH

更新时间: 2024-11-10 01:17:11
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 813K
描述
Single N-Channel Trench MOSFET 60V, 6A, 45m(ohm)

MDS1951URH 数据手册

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MDS1951  
Single N-Channel Trench MOSFET 60V, 6A, 45mΩ  
General Description  
Features  
VDS = 60V  
ID = 6A @VGS = 10V  
RDS(ON)  
< 45mΩ @ VGS = 10V  
< 55mΩ @ VGS = 4.5V  
The MDS1951 uses advanced Magnachip’s  
MOSFET Technology, which provides low on-state  
resistance, high switching performance and  
excellent reliability.  
Applications  
Inverters  
General purpose applications  
5(D)  
6(D)  
7(D)  
8(D)  
G
4(G)  
3(S)  
2(S)  
1(S)  
S
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)  
Characteristics  
Symbol  
VDSS  
Rating  
60  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGSS  
±20  
6.0  
V
TA=25oC  
TA=70oC  
A
Continuous Drain Current(2)  
Pulsed Drain Current  
ID  
4.8  
A
IDM  
PD  
30  
A
TA=25oC  
TA=70oC  
2.5  
Power Dissipation for Single Operation  
W
1.6  
Single Pulse Avalanche Energy(3)  
EAS  
25  
mJ  
oC  
Junction and Storage Temperature Range  
TJ, Tstg  
-55~150  
Thermal Characteristic  
Characteristics  
Symbol  
RθJA  
Rating  
50  
Unit  
Thermal Resistance, Junction-to-Ambient (Steady-State)(1)  
oC/W  
Thermal Resistance, Junction-to-Case  
RθJC  
25  
1
June 2010. Version 1.0  
MagnaChip Semiconductor Ltd.  

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