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MDS1903 PDF预览

MDS1903

更新时间: 2024-11-10 01:17:11
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 831K
描述
Single N-channel Trench MOSFET 100V, 3.3A, 110m(ohm)

MDS1903 数据手册

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MDS1903  
Single N-channel Trench MOSFET 100V, 3.3A, 110mΩ  
General Description  
Features  
The MDS1903 uses advanced MagnaChips MOSFET  
Technology, which provides high performance in on-state  
resistance, fast switching performance and excellent  
quality. MDS1903 is suitable device for DC to DC  
converter and general purpose applications.  
VDS = 100V  
ID = 3.3A @VGS = 10V  
RDS(ON) (MAX)  
< 110mΩ @VGS = 10V  
< 120mΩ @VGS = 6.0V  
5(D)  
6(D)  
7(D)  
8(D)  
G
4(G)  
3(S)  
2(S)  
1(S)  
S
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Drain-Source Voltage  
Symbol  
VDSS  
Rating  
100  
±20  
3.3  
Unit  
V
Gate-Source Voltage  
VGSS  
V
TA=25oC  
TA=70oC  
Continuous Drain Current (1)  
Pulsed Drain Current  
Power Dissipation  
ID  
A
A
2.6  
IDM  
PD  
12  
TA=25oC  
TA=70oC  
2.5  
W
1.6  
Single Pulse Avalanche Energy (2)  
EAS  
21  
mJ  
oC  
Junction and Storage Temperature Range  
TJ, Tstg  
-55~150  
Thermal Characteristics  
Characteristics  
Thermal Resistance, Junction-to-Ambient (1)  
Thermal Resistance, Junction-to-Case  
Symbol  
RθJA  
Rating  
50  
Unit  
oC/W  
RθJC  
25  
1
Jun 2011 Version 1.0  
MagnaChip Semiconductor Ltd.  

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