Datasheet > MDS1951

MDS1951

更新时间： 2024-11-19 01:17:11

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	813K
描述
Single N-Channel Trench MOSFET 60V, 6A, 45m(ohm)

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MDS1951 数据手册

MDS1951

Single N-Channel Trench MOSFET 60V, 6A, 45mΩ

General Description

Features



V_DS= 60V

I_D= 6A @V_GS= 10V

R_DS(ON)

< 45mΩ @ V_GS= 10V

< 55mΩ @ V_GS= 4.5V

The MDS1951 uses advanced Magnachip’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent reliability.

Applications



Inverters

General purpose applications

5(D)

6(D)

7(D)

8(D)

4(G)

3(S)

2(S)

1(S)

Absolute Maximum Ratings (T_a=25^oC unless otherwise noted)

Characteristics

Symbol

V_DSS

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

6.0

T_A=25^oC

T_A=70^oC

Continuous Drain Current⁽²⁾

Pulsed Drain Current

I_D

4.8

I_DM

P_D

T_A=25^oC

T_A=70^oC

2.5

Power Dissipation for Single Operation

1.6

Single Pulse Avalanche Energy⁽³⁾

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristic

Characteristics

Symbol

R_θJA

Rating

Unit

Thermal Resistance, Junction-to-Ambient (Steady-State)⁽¹⁾

^oC/W

Thermal Resistance, Junction-to-Case

R_θJC

June 2010. Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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