Datasheet > MDS1903URH

MDS1903URH

更新时间： 2024-11-19 01:17:11

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	831K
描述
Single N-channel Trench MOSFET 100V, 3.3A, 110m(ohm)

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MDS1903URH 数据手册

MDS1903

Single N-channel Trench MOSFET 100V, 3.3A, 110mΩ

ㄹ

General Description

Features

The MDS1903 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDS1903 is suitable device for DC to DC

converter and general purpose applications.



V_DS= 100V

I_D= 3.3A @V_GS= 10V

R_{DS(ON) (MAX)}

< 110mΩ @V_GS= 10V

< 120mΩ @V_GS= 6.0V

5(D)

6(D)

7(D)

8(D)

4(G)

3(S)

2(S)

1(S)

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

100

±20

3.3

Unit

Gate-Source Voltage

V_GSS

T_A=25^oC

T_A=70^oC

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current

Power Dissipation

I_D

2.6

I_DM

P_D

T_A=25^oC

T_A=70^oC

2.5

1.6

Single Pulse Avalanche Energy ⁽²⁾

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

Unit

^oC/W

R_θJC

Jun 2011 Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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