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MDS1656R PDF预览

MDS1656R

更新时间: 2024-11-22 01:17:11
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 695K
描述
Single N-Channel Trench MOSFET 30V, 7.2A, 28m(ohm)

MDS1656R 数据手册

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ꢀ ꢀ  
MDS1656ꢀ  
SingleꢀNꢁChannelꢀTrenchꢀMOSFETꢀ30V,ꢀ7.2A,ꢀ28mꢂꢀ  
GeneralꢀDescriptionꢀ  
Featuresꢀ  
Theꢀ MDS1656ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ trenchꢀ MOSFETꢀ  
Technologyꢀtoꢀprovideꢀhighꢀperformanceꢀinꢀonꢁstateꢀresistance,ꢀ  
switchingꢀperformanceꢀandꢀreliabilityꢀ  
ꢀ  
ꢀ  
ꢀ  
VDSꢀ=ꢀ30Vꢀ  
IDꢀ=ꢀ7.2Aꢀ @VGSꢀ=ꢀ10Vꢀ  
RDS(ON)ꢀ  
ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ  
<ꢀ28mꢀ @VGSꢀ=ꢀ10Vꢀ  
<ꢀ42mꢀ ꢀ @VGSꢀ=ꢀ4.5Vꢀ  
LowꢀRDS(ON),ꢀlowꢀgateꢀchargeꢀcanꢀbeꢀofferingꢀsuperiorꢀbenefitꢀinꢀ  
theꢀapplication.ꢀ  
Applicationsꢀ  
ꢀ  
ꢀ  
Invertersꢀ  
Generalꢀpurposeꢀapplicationsꢀ  
5(D)ꢀ  
6(D)ꢀ  
7(D)ꢀ  
8(D)ꢀ  
G
4(G)ꢀ  
3(S)ꢀ  
2(S)ꢀ  
1(S)ꢀ  
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=25oCꢀunlessꢀotherwiseꢀnoted)ꢀ  
ꢀ ꢀ  
Characteristicsꢀ  
Symbolꢀ  
Ratingꢀ  
30ꢀ  
Unitꢀ  
Vꢀ  
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ  
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ  
VDSSꢀ  
VGSS  
IDꢀ  
IDM  
PDꢀ  
±20ꢀ  
7.2ꢀ  
Vꢀ  
ꢀ TC=25oCꢀ  
ꢀ TC=70oCꢀ  
Aꢀ  
ꢀ ꢀ ContinuousꢀDrainꢀCurrent(1)  
ꢀ ꢀ PulsedꢀDrainꢀCurrentꢀ  
ꢀ ꢀ PowerꢀDissipationꢀ  
6.2ꢀ  
Aꢀ  
30ꢀ  
Aꢀ  
ꢀ TC=25oCꢀ  
ꢀ TC=70oCꢀ  
2ꢀ  
Wꢀ  
1.44ꢀ  
20ꢀ  
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy(2)  
EAS  
mJꢀ  
oCꢀ  
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ  
TJ,ꢀTstg  
ꢁ55~150ꢀ  
ThermalꢀCharacteristicsꢀ  
Characteristicsꢀ  
Symbolꢀ  
RθJA  
RθJC  
Ratingꢀ  
100ꢀ  
Unitꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(SteadyꢁState)(1)  
ThermalꢀResistance,ꢀJunctionꢁtoꢁCaseꢀ  
oC/Wꢀ  
60ꢀ  
ꢀ ꢀ  
1ꢀ  
Augustꢀ2008.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.  

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