Datasheet > MDS170

MDS170

更新时间： 2024-11-08 22:30:19

品牌	Logo	应用领域
其他 - ETC		脉冲电子航空
页数	文件大小	规格书
3页	268K
描述
170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz

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MDS170 数据手册

MDS170L

170 Watts, 36 Volts, Pulsed

Avionics 1030/1090 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55KT, STYLE 1

The MDS170L is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1030 - 1090 MHz. The

transistor includes input and output prematch for broadband performance. The

device has gold thin-film metallization and diffused ballasting for proven

highest MTTF. Low thermal resistance Solder Sealed Package reduces

junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25^oC²

350 Watts

Maximum Voltage and Current

BVces

BVebo Emitter to Base Voltage

Ic Collector Current

Collector to Base Voltage

50 Volts

3.5 Volts

15 Amps

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 200^oC

+ 200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

Pout

Power Out

Power Input

Power Gain

F = 1030 - 1090 MHz

Vcc = 36 Volts

PW = Note 1

170

Watts

Collector Efficiency

Load Mismatch Tolerance

DF = Note 1

F = 1030 MHz

10:1

VSWR

BVebo

BVces

h_FE

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC - Current Gain

Ie = 20 mA

Ic = 20 mA

Ic = 20 mA, Vce = 5 V

Volts

^oC/W

jc²

Thermal Resistance

0.5

Note 1: MODE- S Pulse Burst, 120 µs at 50% Duty, Long term duty = 5%.

2: At rated pulse conditions

Initial Issue January, 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

12 3

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