5秒后页面跳转
MDS170 PDF预览

MDS170

更新时间: 2024-11-17 22:30:19
品牌 Logo 应用领域
其他 - ETC 脉冲电子航空
页数 文件大小 规格书
3页 268K
描述
170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz

MDS170 数据手册

 浏览型号MDS170的Datasheet PDF文件第2页浏览型号MDS170的Datasheet PDF文件第3页 
MDS170L  
170 Watts, 36 Volts, Pulsed  
Avionics 1030/1090 MHz  
GENERAL DESCRIPTION  
CASE OUTLINE  
55KT, STYLE 1  
The MDS170L is a high power COMMON BASE bipolar transistor. It is  
designed for pulsed systems in the frequency band 1030 - 1090 MHz. The  
transistor includes input and output prematch for broadband performance. The  
device has gold thin-film metallization and diffused ballasting for proven  
highest MTTF. Low thermal resistance Solder Sealed Package reduces  
junction temperature, extends life.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation @ 25oC2  
350 Watts  
Maximum Voltage and Current  
BVces  
BVebo Emitter to Base Voltage  
Ic Collector Current  
Collector to Base Voltage  
50 Volts  
3.5 Volts  
15 Amps  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
- 65 to + 200oC  
+ 200oC  
ELECTRICAL CHARACTERISTICS @ 25 OC  
SYMBOL  
CHARACTERISTICS  
TEST CONDITIONS  
MIN  
TYP  
MAX UNITS  
Pout  
Pin  
Pg  
Power Out  
Power Input  
Power Gain  
F = 1030 - 1090 MHz  
Vcc = 36 Volts  
PW = Note 1  
170  
7
Watts  
Watts  
dB  
34  
Collector Efficiency  
Load Mismatch Tolerance  
DF = Note 1  
F = 1030 MHz  
40  
%
η
c
10:1  
VSWR  
BVebo  
BVces  
hFE  
Emitter to Base Breakdown  
Collector to Emitter Breakdown  
DC - Current Gain  
Ie = 20 mA  
Ic = 20 mA  
Ic = 20 mA, Vce = 5 V  
Volts  
Volts  
20  
oC/W  
jc2  
Thermal Resistance  
0.5  
θ
Note 1: MODE- S Pulse Burst, 120 µs at 50% Duty, Long term duty = 5%.  
2: At rated pulse conditions  
Initial Issue January, 1996  
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT  
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,  
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.  
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120  

与MDS170相关器件

型号 品牌 获取价格 描述 数据表
MDS170L ETC

获取价格

170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz
MDS175 LGE

获取价格

暂无描述
MDS1754 MGCHIP

获取价格

N-Channel Trench MOSFET, 40V, 7.6A, 29m(ohm)
MDS1754RH MGCHIP

获取价格

N-Channel Trench MOSFET, 40V, 7.6A, 29m(ohm)
MDS-189 TE

获取价格

High Level Termination Insensitive Mixer, 1 - 3500 MHz
MDS-189PIN TE

获取价格

High Level Termination Insensitive Mixer, 1 - 3500 MHz
MDS-189-PIN MACOM

获取价格

(non-RoHS) High Level Termination Insensitive
MDS1903 MGCHIP

获取价格

Single N-channel Trench MOSFET 100V, 3.3A, 110m(ohm)
MDS1903URH MGCHIP

获取价格

Single N-channel Trench MOSFET 100V, 3.3A, 110m(ohm)
MDS1951 MGCHIP

获取价格

Single N-Channel Trench MOSFET 60V, 6A, 45m(ohm)