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MDS175 PDF预览

MDS175

更新时间: 2024-11-18 21:15:55
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
1页 1745K
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MDS175 技术参数

IF(A):175Maximum recurrent peak reverse voltage:600-1600
VFM(V):1.51IFM(A):175
IRRM(MA):12Peak forward surge current:2700
I2t(A2S):38800Storage Temperature Range:150

MDS175 数据手册

  
Three-phase bridge rectifier  
modules  
Features  
Noninsulated and common electrode for base.  
International standard packaging.  
Total pressure structure,good ability of temperature characteristic and  
power cycle.  
Maximum operating junction temperature.  
Hight surge current.  
Low peak on-state voltage.  
MDS  
2
V
I
I
I
I
V
FM@ FM  
I
Tjm Viso  
Id@Tc  
V
Rjc  
RRM  
RF  
I T  
F(AV)  
FSM  
F(RMS)  
FO  
RRM  
Type  
A2s×104  
0.12  
A×103  
A
A
A
A
A
mA  
v
mΩ  
V
V(A.C)  
℃/W  
V
0.5  
600~1600  
30  
10  
30  
2
9.0  
0.44  
MDS30  
25  
39  
0.80  
0.80  
0.80  
100  
1.1  
150  
2500  
2500  
0.75  
9.0 0.3  
MDS50 50  
0.28  
100  
100  
17  
25  
50  
75  
150  
150  
4
600~1600  
1.2  
75  
MDS75  
0.24  
2500  
2500  
7.0  
4.5  
3.8  
0.51  
0.72  
1.14  
47  
600~1600  
600~1600  
1.25  
1.30  
4
8
1.00  
1.20  
0.2  
MDS100  
MDS150  
51  
71  
100  
150  
33  
50  
100  
0.80  
150  
100  
100  
1.20  
1.51  
1.35  
1.50  
2.70  
2.1  
0.80  
0.80  
0.80  
0.14  
150 2500  
600~1600  
600~1600  
600~1600  
150  
175  
200  
10  
12  
15  
175  
58  
67  
3.1  
2.8  
2500  
2500  
150  
150  
83  
95  
MDS175  
MDS200  
3.88  
2.21  
0.14  
100  
100  
200  
0.1  
http://www.lgesemi.com  
Revision:20190101-P1  
mail:lge@lgesemi.com  

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Three Phase Rectifier Bridge