Datasheet > MDS1656URH

MDS1656URH

更新时间： 2024-11-19 17:15:23

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1083K
描述
PackageSOIC 8

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MDS1656URH 数据手册

MDS1656

Single N-Channel Trench MOSFET 30V, 7.2A, 28mΩ

General Description

Features

The MDS1656 uses advanced Magnachip’s trench MOSFET

Technology to provide high performance in on-state resistance,

switching performance and reliability



V_DS= 30V

I_D= 7.2A @V_GS= 10V

R_DS(ON)

< 28mΩ @V_GS= 10V

< 42mΩ @V_GS= 4.5V

Low R_DS(ON), low gate charge can be offering superior benefit in

the application.

Applications



Inverters

General purpose applications

8(D)

7(D)

6(D)

5(D)

1(S)

2(S)

3(S)

4(G)

Absolute Maximum Ratings (T_a=25^oC unless otherwise noted)

Characteristics

Symbol

V_DSS

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

7.2

T_C=25^oC

T_C=70^oC

Continuous Drain Current⁽¹⁾

Pulsed Drain Current

Power Dissipation

I_D

6.2

I_DM

P_D

T_C=25^oC

T_C=70^oC

1.44

Single Pulse Avalanche Energy⁽²⁾

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

100

Unit

Thermal Resistance, Junction-to-Ambient(Steady-State)⁽¹⁾

Thermal Resistance, Junction-to-Case

^oC/W

R_θJC

Jul. 2021. Version 2.2

Magnachip Semiconductor Ltd.

12 3 4 5 6

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