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MDS1654 PDF预览

MDS1654

更新时间: 2024-11-06 01:17:11
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 735K
描述
Single N-Channel Trench MOSFET 30V, 15A, 9.5m(ohm)

MDS1654 数据手册

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MDS1654  
Single N-Channel Trench MOSFET 30V, 15A, 9.5m  
General Description  
Features  
The MDS1654 uses advanced MagnaChips MOSFET  
Technology, which provides low on-state resistance,  
high switching performance and excellent reliability.  
à
à
à
VDS = 30V  
ID = 15A @VGS = 10V  
RDS(ON)  
< 9.5m@VGS = 10V  
MDS1654 is suitable device for DC-DC Converters  
and general purpose applications.  
< 13.0m@VGS = 4.5V  
Applications  
à
DC-DC Converters  
5(D)  
6(D)  
7(D)  
8(D)  
G
4(G)  
3(S)  
2(S)  
1(S)  
S
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Drain-Source Voltage  
Symbol  
VDSS  
Rating  
30  
Unit  
V
Gate-Source Voltage  
VGSS  
±20  
V
Ta=25oC  
Ta=100oC  
15  
A
Continuous Drain Current  
Pulsed Drain Current  
Power Dissipation (1)  
ID  
10.5  
60  
A
IDM  
PD  
A
Ta=25oC  
Ta=100oC  
2.5  
W
1.25  
98  
Single Pulse Avalanche Energy (2)  
EAS  
mJ  
Junction and Storage Temperature Range  
TJ, Tstg  
-55~150  
oC  
Thermal Characteristics  
Characteristics  
Thermal Resistance, Junction-to-Ambient (1)  
Thermal Resistance, Junction-to-Case  
Symbol  
RθJA  
Rating  
50  
Unit  
oC/W  
RθJC  
25  
1
Feb. 2011. Version 1.1  
MagnaChip Semiconductor Ltd.  

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