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MDS1652RP PDF预览

MDS1652RP

更新时间: 2024-11-22 01:11:11
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 705K
描述
Single N-Channel Trench MOSFET 30V, 17A, 6.5m(ohm)

MDS1652RP 数据手册

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ꢀ ꢀ  
MDS1652ꢀꢀ  
ꢀ ꢀ ꢀ ꢀ SingleꢀNꢁChannelꢀTrenchꢀMOSFETꢀ30V,ꢀ17A,ꢀ6.5mꢀ  
GeneralꢀDescriptionꢀ  
Featuresꢀ  
Theꢀ MDS1652ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ MOSFETꢀ  
Technology,ꢀ whichꢀ providesꢀ highꢀ performanceꢀ inꢀ onꢁstateꢀ  
resistance,ꢀfastꢀswitchingꢀperformanceꢀandꢀexcellentꢀquality.ꢀ ꢀ  
Excellentꢀ lowꢀ RDS(ON),ꢀ lowꢀ gateꢀ chargeꢀ andꢀ operationꢀ forꢀ  
BatteryꢀApplication.ꢀ  
ꢀ  
ꢀ  
ꢀ  
VDSꢀ=ꢀ30Vꢀ  
IDꢀ=ꢀ17Aꢀ ꢀ@VGSꢀ=ꢀ10Vꢀ  
RDS(ON)  
<ꢀ6.5mꢀ @VGSꢀ=ꢀ10Vꢀ  
<ꢀ9.5mꢀ @VGSꢀ=ꢀ4.5Vꢀ  
ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ  
Applicationsꢀ  
ꢀ  
ꢀ  
ꢀ  
LiꢁIonꢀBatteryꢀApplicationꢀ  
PortableꢀApplicationꢀ  
NotebookꢀPCꢀApplicationꢀ  
5(D)ꢀ  
6(D)ꢀ  
7(D)ꢀ  
8(D)ꢀ  
G
4(G)ꢀ  
3(S)ꢀ  
2(S)ꢀ  
1(S)ꢀ  
AbsolouteꢀMaximunꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ  
Characteristicsꢀ  
Symbolꢀ  
VDSS  
VGSS  
Ratingꢀ  
Unitꢀ  
Vꢀ  
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ  
30ꢀ  
±20ꢀ  
17ꢀ  
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ  
Vꢀ  
ꢀ Ta=25oCꢀ  
Aꢀ  
ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ  
ꢀ ꢀ PulsedꢀDrainꢀCurrentꢀ  
IDꢀ  
IDM  
PDꢀ  
Ta=100oCꢀ  
11ꢀ  
Aꢀ  
68ꢀ  
Aꢀ  
ꢀ Ta=25oCꢀ  
ꢀ Ta=100oCꢀ  
3.1ꢀ  
Wꢀ  
Wꢀ  
mJꢀ  
oC  
ꢀ ꢀ PowerꢀDissipationꢀ(1)  
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergyꢀ(2)  
1.2ꢀ  
EAS  
100ꢀ  
ꢁ55~150ꢀ  
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ  
TJ,ꢀTstg  
ThermalꢀCharacteristicsꢀ  
Characteristicsꢀ  
Symbolꢀ  
RθJA  
RθJC  
Ratingꢀ  
40ꢀ  
Unitꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)  
oC/Wꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁCaseꢀ  
24ꢀ  
1ꢀ  
Decemberꢀ2008.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.  

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