Datasheet > MDS1653

MDS1653

更新时间： 2024-11-19 01:17:11

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	750K
描述
Single N-Channel Trench MOSFET 30V, 12A, 12m(ohm)

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MDS1653 数据手册

MDS1653

Single N-Channel Trench MOSFET 30V, 12A, 12mΩ

General Description

Features

The MDS1653 uses advanced MagnaChip’s MOSFET

Technology, which provides low on-state resistance,

high switching performance and excellent reliability.

V_DS= 30V

I_D= 12A @V_GS= 10V

R_DS(ON)

< 12.0mΩ @V_GS= 10V

MDS1653 is suitable device for DC-DC Converters

and general purpose applications.

< 17.5mΩ @V_GS= 4.5V

Applications

DC-DC Converters

5(D)

6(D)

7(D)

8(D)

4(G)

3(S)

2(S)

1(S)

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

Unit

Gate-Source Voltage

V_GSS

±20

T_a=25^oC

T_a=100^oC

Continuous Drain Current

Pulsed Drain Current

Power Dissipation ⁽¹⁾

I_D

8.6

I_DM

P_D

T_a=25^oC

T_a=100^oC

2.5

1.25

Single Pulse Avalanche Energy ⁽²⁾

E_AS

Junction and Storage Temperature Range

T_J, T_stg

-55~150

^oC

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

Unit

^oC/W

R_θJC

Feb. 2011. Version 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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