Datasheet > MBD110DWT1

MBD110DWT1

更新时间： 2024-11-23 11:12:23

品牌	Logo	应用领域
科信 - KEXIN		二极管测试
页数	文件大小	规格书
2页	39K
描述
Dual Schottky Barrier Diodes

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中文翻译

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数据手册

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MBD110DWT1 数据手册

SMD Type

Diodes

Dual Schottky Barrier Diodes

MBD110DWT1

MBD330DWT1;MBD770DWT1

SOT-363

Unit: mm

+0.1

1.3

-0.1

0.65

Features

Extremely Low Minority Carrier Lifetime

Very Low Capacitance

Low Reverse Leakage

+0.05

0.1

-0.02

+0.1

0.3

-0.1

+0.1

2.1

-0.1

Absolute M axim um Ratings Ta = 25

Param eter

Sym bol

V^R

Value

Unit

Vdc

m A

MBD110DW T1

Reverse Voltage

MBD330DW T1

MBD770DW T1

Forward Power Dissipation TA = 25

Junction Tem perature

P^F

T^J

120

-55 to +125

-55 to +150

Storage Tem perature Range

Tstg

www.kexin.com.cn

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