5秒后页面跳转
捷配首页

Datasheet > MBD330DWT1G
MBD330DWT1G PDF预览

MBD330DWT1G

更新时间： 2024-10-18 03:50:11
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
6页 64K
描述
Dual Schottky Barrier Diodes

阅读下载

中文翻译

获取价格

MBD330DWT1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-88包装说明：R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.60
风险等级：0.7配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大二极管电容：1.5 pF二极管元件材料：SILICON
二极管类型：MIXER DIODE最大正向电压 (VF)：0.6 V
频带：ULTRA HIGH FREQUENCYJESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
最大功率耗散：0.12 W认证状态：Not Qualified
最大重复峰值反向电压：30 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

MBD330DWT1G 数据手册

 浏览型号MBD330DWT1G的Datasheet PDF文件第2页浏览型号MBD330DWT1G的Datasheet PDF文件第3页浏览型号MBD330DWT1G的Datasheet PDF文件第4页浏览型号MBD330DWT1G的Datasheet PDF文件第5页浏览型号MBD330DWT1G的Datasheet PDF文件第6页 
MBD110DWT1,  
MBD330DWT1,  
MBD770DWT1  
Preferred Device  
Dual Schottky Barrier  
Diodes  
http://onsemi.com  
Application circuit designs are moving toward the consolidation of  
device count and into smaller packages. The new SOT−363 package is  
a solution which simplifies circuit design, reduces device count, and  
reduces board space by putting two discrete devices in one small  
six−leaded package. The SOT−363 is ideal for low−power surface  
mount applications where board space is at a premium, such as  
portable products.  
Anode 1  
6 Cathode  
5 N/C  
N/C 2  
Cathode 3  
4 Anode  
Surface Mount Comparisons:  
SOT−363  
SOT−23  
2
Area (mm )  
4.6  
120  
2
7.6  
225  
1
Max Package P (mW)  
Device Count  
D
1
Space Savings:  
Package  
1 ꢀ SOT−23  
2 ꢀ SOT−23  
SOT−363  
40%  
70%  
SC−88 / SOT−363  
CASE 419B  
STYLE 6  
The MBD110DW, MBD330DW, and MBD770DW devices are  
spin−offs of our popular MMBD101LT1, MMBD301LT1, and  
MMBD701LT1 SOT−23 devices. They are designed for  
high−efficiency UHF and VHF detector applications. Readily  
available to many other fast switching RF and digital applications.  
MARKING DIAGRAM  
Features  
6
• Extremely Low Minority Carrier Lifetime  
• Very Low Capacitance  
xx M G  
G
• Low Reverse Leakage  
1
• Pb−Free Packages are Available  
MAXIMUM RATINGS  
xx = Device Code  
Refer to Ordering Table,  
page 2  
Rating  
Symbol  
Value  
Unit  
Reverse Voltage  
MBD110DWT1  
MBD330DWT1  
MBD770DWT1  
V
7.0  
30  
70  
V
R
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Forward Power Dissipation T = 25°C  
P
T
120  
mW  
°C  
A
F
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Junction Temperature  
−55 to +125  
−55 to +150  
J
Storage Temperature Range  
T
stg  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 5  
MBD110DWT1/D  
123456

中文翻译

下载PDF

MBD330DWT1G 替代型号

型号 品牌 替代类型 描述 数据表
MBD330DWT1 ONSEMI

完全替代

 Dual Schottky Barrier Diodes
MBD110DWT1G ONSEMI

功能相似

 Dual Schottky Barrier Diodes
MBD110DWT1 ONSEMI

功能相似

 Dual Schottky Barrier Diodes

与MBD330DWT1G相关器件

型号 品牌 获取价格 描述 数据表
MBD330DWT2 MOTOROLA

获取价格

 		SILICON, VHF-UHF BAND, MIXER DIODE
MBD330DWT3 MOTOROLA

获取价格

 		Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, CASE 419B-01, 6 PIN
MBD-333-AL ETC

获取价格

 		Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor
MBD4057 TE

获取价格

 		Zero Bias Operation
MBD4057-C18 TE

获取价格

 		Zero Bias Operation
MBD4148W FCI

获取价格

 		200mW Surface Mount Zener Diode SWITCHING DIODE Collector current 150 mA
MBD4448HADW TSC

获取价格

 		Switching Diode Small Signal Diode Fast switching speed
MBD4448HAQW TSC

获取价格

 		Switching Diode Small Signal Diode Fast switching speed
MBD4448HAQW_15 TSC

获取价格

 		Switching Diode
MBD4448HAQWRFG TSC

获取价格

 		Switching Diode

与MBD330DWT1G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证