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MBD110DWT1G

更新时间： 2024-11-26 03:50:11
品牌 Logo 应用领域
安森美 - ONSEMI 微波混频二极管光电二极管
页数 文件大小 规格书
6页 64K
描述
Dual Schottky Barrier Diodes

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中文翻译

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MBD110DWT1G 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：SC-88包装说明：HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-70, SC-88, 6 PIN
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.60
风险等级：5.24配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大二极管电容：1 pF二极管元件材料：SILICON
二极管类型：MIXER DIODE最大正向电压 (VF)：0.6 V
频带：ULTRA HIGH FREQUENCYJESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260最大功率耗散：0.12 W
认证状态：Not Qualified最大重复峰值反向电压：7 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

MBD110DWT1G 数据手册

 浏览型号MBD110DWT1G的Datasheet PDF文件第2页浏览型号MBD110DWT1G的Datasheet PDF文件第3页浏览型号MBD110DWT1G的Datasheet PDF文件第4页浏览型号MBD110DWT1G的Datasheet PDF文件第5页浏览型号MBD110DWT1G的Datasheet PDF文件第6页 
MBD110DWT1,  
MBD330DWT1,  
MBD770DWT1  
Preferred Device  
Dual Schottky Barrier  
Diodes  
http://onsemi.com  
Application circuit designs are moving toward the consolidation of  
device count and into smaller packages. The new SOT−363 package is  
a solution which simplifies circuit design, reduces device count, and  
reduces board space by putting two discrete devices in one small  
six−leaded package. The SOT−363 is ideal for low−power surface  
mount applications where board space is at a premium, such as  
portable products.  
Anode 1  
6 Cathode  
5 N/C  
N/C 2  
Cathode 3  
4 Anode  
Surface Mount Comparisons:  
SOT−363  
SOT−23  
2
Area (mm )  
4.6  
120  
2
7.6  
225  
1
Max Package P (mW)  
Device Count  
D
1
Space Savings:  
Package  
1 ꢀ SOT−23  
2 ꢀ SOT−23  
SOT−363  
40%  
70%  
SC−88 / SOT−363  
CASE 419B  
STYLE 6  
The MBD110DW, MBD330DW, and MBD770DW devices are  
spin−offs of our popular MMBD101LT1, MMBD301LT1, and  
MMBD701LT1 SOT−23 devices. They are designed for  
high−efficiency UHF and VHF detector applications. Readily  
available to many other fast switching RF and digital applications.  
MARKING DIAGRAM  
Features  
6
• Extremely Low Minority Carrier Lifetime  
• Very Low Capacitance  
xx M G  
G
• Low Reverse Leakage  
1
• Pb−Free Packages are Available  
MAXIMUM RATINGS  
xx = Device Code  
Refer to Ordering Table,  
page 2  
Rating  
Symbol  
Value  
Unit  
Reverse Voltage  
MBD110DWT1  
MBD330DWT1  
MBD770DWT1  
V
7.0  
30  
70  
V
R
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Forward Power Dissipation T = 25°C  
P
T
120  
mW  
°C  
A
F
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Junction Temperature  
−55 to +125  
−55 to +150  
J
Storage Temperature Range  
T
stg  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 5  
MBD110DWT1/D  
123456

中文翻译

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MBD110DWT1G 替代型号

型号 品牌 替代类型 描述 数据表
MBD330DWT1G ONSEMI

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MBD330DWT1 ONSEMI

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MBD110DWT1 ONSEMI

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