Datasheet > MBD110DWT1G_07

MBD110DWT1G_07

更新时间： 2024-10-18 11:12:23

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
6页	145K
描述
Dual Schottky Barrier Diodes

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中文翻译

获取价格

数据手册

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MBD110DWT1G_07 数据手册

MBD110DWT1G,

MBD330DWT1G,

MBD770DWT1G

Preferred Device

Dual Schottky Barrier

Diodes

http://onsemi.com

Application circuit designs are moving toward the consolidation of

device count and into smaller packages. The new SOT−363 package is

a solution which simplifies circuit design, reduces device count, and

reduces board space by putting two discrete devices in one small

six−leaded package. The SOT−363 is ideal for low−power surface

mount applications where board space is at a premium, such as

portable products.

Anode 1

6 Cathode

5 N/C

N/C 2

Cathode 3

4 Anode

Surface Mount Comparisons:

SOT−363

SOT−23

7.6

Area (mm )

4.6

120

Max Package P (mW)

225

Device Count

Space Savings:

Package

SC−88 / SOT−363

CASE 419B

STYLE 6

1 ꢀ SOT−23

2 ꢀ SOT−23

SOT−363

40%

70%

The MBD110DW, MBD330DW, and MBD770DW devices are

spin−offs of our popular MMBD101LT1, MMBD301LT1, and

MMBD701LT1 SOT−23 devices. They are designed for

high−efficiency UHF and VHF detector applications. Readily

available to many other fast switching RF and digital applications.

MARKING DIAGRAM

Features

xx M G

• Extremely Low Minority Carrier Lifetime

• Very Low Capacitance

• Low Reverse Leakage

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

xx = Device Code

Refer to Ordering Table,

page 2

MAXIMUM RATINGS

= Date Code

= Pb−Free Package

Rating

Symbol

Value

Unit

(Note: Microdot may be in either location)

Reverse Voltage

MBD110DWT1G

MBD330DWT1G

MBD770DWT1G

7.0

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Forward Power Dissipation T = 25°C

120

°C

Junction Temperature

−55 to +125

−55 to +150

Preferred devices are recommended choices for future use

and best overall value.

Storage Temperature Range

stg

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Publication Order Number:

October, 2009 − Rev. 6

MBD110DWT1/D

12 3 4 5 6

中文翻译

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与MBD110DWT1G_07相关器件

型号	品牌	获取价格	描述	数据表
MBD110DWT1G_12	ONSEMI	获取价格	Dual Schottky Barrier Diodes
MBD110DWT2	MOTOROLA	获取价格	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon
MBD110DWT3	MOTOROLA	获取价格	SILICON, VHF-UHF BAND, MIXER DIODE, CASE 419B-01, 6 PIN
MBD-153-AL	ETC	获取价格	Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor
MBD-153-KL	ETC	获取价格	Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor
MBD20	AUK	获取价格	Board Connector, 20 Contact(s), 2 Row(s), Male, Straight, 0.079 inch Pitch, Solder Termina
MBD201	ONSEMI	获取价格	DIODE SILICON, UHF BAND, MIXER DIODE, TO-226AC, CASE 182-02, TO-92, 2 PIN, Microwave Mixer
MBD2057	TE	获取价格	Zero Bias Operation
MBD2057-C18	TE	获取价格	Zero Bias Operation
MBD-20-63HP	MINI	获取价格	Bi-Directional Coupler

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