5秒后页面跳转
MBD301 PDF预览

MBD301

更新时间: 2024-11-22 22:30:23
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 二极管开关
页数 文件大小 规格书
6页 133K
描述
30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

MBD301 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:O-PBCY-T2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.71配置:SINGLE
最大二极管电容:1.5 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95代码:TO-226ACJESD-30 代码:O-PBCY-T2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL最大功率耗散:0.28 W
认证状态:Not Qualified子类别:Other Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOMBase Number Matches:1

MBD301 数据手册

 浏览型号MBD301的Datasheet PDF文件第2页浏览型号MBD301的Datasheet PDF文件第3页浏览型号MBD301的Datasheet PDF文件第4页浏览型号MBD301的Datasheet PDF文件第5页浏览型号MBD301的Datasheet PDF文件第6页 
Order this document  
by MBD301/D  
SEMICONDUCTOR TECHNICAL DATA  
Schottky Barrier Diodes  
Motorola Preferred Devices  
30 VOLTS  
SILICON HOT–CARRIER  
DETECTOR AND SWITCHING  
DIODES  
These devices are designed primarily for high–efficiency UHF and VHF detector  
applications. They are readily adaptable to many other fast switching RF and digital  
applications. They are supplied in an inexpensive plastic package for low–cost,  
high–volume consumer and industrial/commercial requirements. They are also  
available in a Surface Mount package.  
The Schottky Barrier Construction Provides Ultra–Stable Characteristics by  
Eliminating the “Cat–Whisker” or “S–Bend” Contact  
Extremely Low Minority Carrier Lifetime – 15 ps (Typ)  
Very Low Capacitance – 1.5 pF (Max) @ V = 15 V  
R
Low Reverse Leakage – I = 13 nAdc (Typ) MBD301, MMBD301  
R
1
2
CASE 18202, STYLE 1  
(TO–226AC)  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
MBD301  
MMBD301LT1  
Value  
30  
Rating  
Reverse Voltage  
Forward Power Dissipation  
Symbol  
Unit  
2
1
CATHODE  
ANODE  
V
R
Volts  
P
F
J
@ T = 25°C  
280  
2.8  
200  
2.0  
mW  
mW/°C  
A
Derate above 25°C  
3
Operating Junction  
Temperature Range  
T
°C  
°C  
1
55 to +125  
55 to +150  
2
Storage Temperature Range  
DEVICE MARKING  
MMBD301LT1 = 4T  
T
stg  
CASE 31808, STYLE 8  
SOT23 (TO236AB)  
3
1
CATHODE  
ANODE  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
30  
Typ  
Max  
Unit  
Volts  
pF  
Reverse Breakdown Voltage (I = 10 µA)  
V
(BR)R  
R
Total Capacitance (V = 15 V, f = 1.0 MHz) Figure 1  
C
0.9  
15  
1.5  
R
T
Minority Carrier Lifetime (I = 5.0 mA, Krakauer Method) Figure 2  
ps  
F
Reverse Leakage (V = 25 V) Figure 3  
I
13  
200  
0.45  
0.6  
nAdc  
Vdc  
Vdc  
R
R
Forward Voltage (I = 1.0 mAdc) Figure 4  
V
0.38  
0.52  
F
F
F
Forward Voltage (I = 10 mAdc) Figure 4  
V
F
NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk.  
Thermal Clad is a registered trademark of the Berquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  

MBD301 替代型号

型号 品牌 替代类型 描述 数据表
MBD101G ONSEMI

功能相似

Schottky Barrier Diodes
MBD101 ONSEMI

功能相似

SILICON SCHOTTKY BARRIER DIODES

与MBD301相关器件

型号 品牌 获取价格 描述 数据表
MBD301_07 ONSEMI

获取价格

Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes
MBD301G ONSEMI

获取价格

Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes
MBD301LT1 MOTOROLA

获取价格

30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES
MBD3057 TE

获取价格

Zero Bias Operation
MBD3057-C18 TE

获取价格

Zero Bias Operation
MBD330D MOTOROLA

获取价格

Dual Schottky Barrier Diodes
MBD330DWT1 ETL

获取价格

Dual SCHOTTKY Barrier Diodes
MBD330DWT1 MOTOROLA

获取价格

Dual Schottky Barrier Diodes
MBD330DWT1 ONSEMI

获取价格

Dual Schottky Barrier Diodes
MBD330DWT1 LRC

获取价格

Dual SCHOTTKY Barrier Diodes