5秒后页面跳转
MBD101 PDF预览

MBD101

更新时间: 2024-11-25 22:30:23
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
4页 86K
描述
SILICON SCHOTTKY BARRIER DIODES

MBD101 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-92包装说明:PLASTIC, CASE 182-06, TO-226AC, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.60
Factory Lead Time:1 week风险等级:5.29
配置:SINGLE最大二极管电容:1 pF
二极管元件材料:SILICON二极管类型:MIXER DIODE
频带:ULTRA HIGH FREQUENCYJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):240最大功率耗散:0.28 W
认证状态:Not Qualified子类别:Microwave Mixer Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:30

MBD101 数据手册

 浏览型号MBD101的Datasheet PDF文件第2页浏览型号MBD101的Datasheet PDF文件第3页浏览型号MBD101的Datasheet PDF文件第4页 
Order this document  
by MBD101/D  
SEMICONDUCTOR TECHNICAL DATA  
Designed primarily for UHF mixer applications but suitable also for use in detector  
and ultra–fast switching circuits. Supplied in an inexpensive plastic package for  
low–cost, high–volume consumer requirements. Also available in Surface Mount  
package.  
Motorola Preferred Devices  
Low Noise Figure — 6.0 dB Typ @ 1.0 GHz  
SILICON SCHOTTKY  
BARRIER DIODES  
Very Low Capacitance — Less Than 1.0 pF @ Zero Volts  
High Forward Conductance — 0.5 Volts (Typ) @ I = 10 mA  
F
2
1
CATHODE  
ANODE  
1
2
CASE 18202, STYLE 1  
(TO–226AC)  
3
1
CATHODE  
ANODE  
3
MAXIMUM RATINGS  
1
MBD101  
MMBD101LT1  
Value  
2
Rating  
Reverse Voltage  
Forward Power Dissipation  
Symbol  
Unit  
CASE 31808, STYLE 8  
SOT23 (TO236AB)  
V
R
7.0  
Volts  
P
F
@ T = 25°C  
280  
2.2  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
Junction Temperature  
Storage Temperature Range  
T
+150  
°C  
°C  
J
T
stg  
55 to +150  
DEVICE MARKING  
MMBD101LT1 = 4M  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Reverse Breakdown Voltage  
(I = 10 µAdc)  
R
V
7.0  
10  
Volts  
(BR)R  
Diode Capacitance  
(V = 0, f = 1.0 MHz, Note 1)  
R
C
V
0.88  
0.5  
1.0  
0.6  
pF  
T
F
(1)  
Forward Voltage  
(I = 10 mAdc)  
F
Volts  
µAdc  
Reverse Leakage  
(V = 3.0 Vdc)  
R
I
R
0.02  
0.25  
NOTE: MMBD101LT1 is also available in bulk packaging. Use MMBD101L as the device title to order this device in bulk.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Thermal Clad is a registered trademark of the Berquist Company.  
Motorola, Inc. 1997  

MBD101 替代型号

型号 品牌 替代类型 描述 数据表
MBD301 ONSEMI

功能相似

SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES
MBD301 MOTOROLA

功能相似

30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

与MBD101相关器件

型号 品牌 获取价格 描述 数据表
MBD101_07 ONSEMI

获取价格

Schottky Barrier Diodes
MBD101G ONSEMI

获取价格

Schottky Barrier Diodes
MBD1057 TE

获取价格

Zero Bias Operation
MBD1057-C18 TE

获取价格

Zero Bias Operation
MBD110DWT1 TYSEMI

获取价格

Extremely Low Minority Carrier Lifetime
MBD110DWT1 ONSEMI

获取价格

Dual Schottky Barrier Diodes
MBD110DWT1 MOTOROLA

获取价格

Dual Schottky Barrier Diodes
MBD110DWT1 LRC

获取价格

Dual SCHOTTKY Barrier Diodes
MBD110DWT1 ETL

获取价格

Dual SCHOTTKY Barrier Diodes
MBD110DWT1 KEXIN

获取价格

Dual Schottky Barrier Diodes