Datasheet > MBD110DWT1

MBD110DWT1

更新时间： 2024-11-22 22:30:03

品牌	Logo	应用领域
乐山 - LRC		二极管测试
页数	文件大小	规格书
5页	241K
描述
Dual SCHOTTKY Barrier Diodes

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技术参数
数据手册

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MBD110DWT1 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.57
Is Samacsys：	N	最大正向电压 (VF)：	0.6 V
最高工作温度：	125 °C	最低工作温度：	-55 °C
最大功率耗散：	0.12 W	最大重复峰值反向电压：	7 V
最大反向电流：	0.25 µA	反向测试电压：	3 V
子类别：	Other Diodes	表面贴装：	YES
Base Number Matches：	1

MBD110DWT1 数据手册

LESHAN RADIO COMPANY, LTD.

Dual SCHOTTKY Barrier Diodes

Application circuit designs are moving toward the consolidation of

device count and into smaller packages. The new SOT–363 package is

a solution which simplifies circuit design, reduces device count, and

reduces board space by putting two discrete devices in one small six–

leaded package. The SOT–363 is ideal for low–power surface mount

applications where board space is at a premium, such as portable

products.

MBD110DWT1

MBD330DWT1

MBD770DWT1

Surface Mount Comparisons:

SOT–363

SOT–23

7.6

Area (mm )

4.6

120

Max Package P _D(mW)

Device Count

225

SOT–363

CASE 419B–01, STYLE 6

Space Savings:

Package

1 × SOT–23

40%

2 × SOT–23

70%

Cathode

N/C

Anode

SOT–363

The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular

MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed

for high–efficiency UHF and VHF detector applications. Readily available to many other

fast switching RF and digital applications.

• Extremely Low Minority Carrier Lifetime

Anode

N/C Cathode

• Very Low Capacitance

• Low Reverse Leakage

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

MBD110DWT1

MBD330DWT1

MBD770DWT1

V R

7.0

Vdc

Forward Power Dissipation

T A = 25°C

P F

120

Junction Temperature

Storage Temperature Range

T J

–55 to +125

–55 to +150

°C

T stg

DEVICE MARKING

MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5

Thermal Clad is a trademark of the Bergquist Company.

MBD110–1/5

12 3 4 5

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