MBDxx57-x Series
Planar Back (Tunnel) Diodes
Rev. V2
Features
Zero Bias Operation
Low Video Impedance
Excellent Temperature Stability
Screening per MIL-PRF-19500 and MIL-PRF-
35834 available
RoHS* Compliant
Description
The MBD series of back (tunnel) diodes are
fabricated on germanium substrates using
passivated, planar construction and gold
metallization for reliable operation up to +110°C.
Unlike the standard tunnel diode IP is minimized for
detector operation and offered in five nominal values
with varying degrees of sensitivity and video
impedance. The back detector is generally operated
with zero bias and is known for its excellent
temperature stability and fast video rise times
Die Electrical Specifications: TA = +25°C, Peak / Valley Current = 2.5 A
Junction
Capacitance
(CJ)
Peak
Current
(IP)
Video
Resistance
(RV)
Reverse
Voltage (
VR)
Forward
Voltage
(VF)
Sensitivity
(γ)
VR = VV,
100 MHz
PIN = -20 dBm,
RL = 10 kΩ, 10 GHz
Part Number
IR = 500 µA
IF = 3 mA
(pF)
(µA)
(mV / mW)
(Ω)
(mV)
Min.
(mV)
Max.
Max.
Min.
100
200
300
400
500
Max.
200
300
400
500
600
Typ.
1000
750
500
275
250
Typ.
MBD1057-C18
MBD2057-C18
MBD3057-C18
MBD4057-C18
MBD5057-C18
0.30
0.30
0.30
0.30
0.30
180
130
80
420
410
400
400
400
135
130
125
120
110
65
60
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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