Datasheet > MBD301LT1

MBD301LT1

更新时间： 2024-11-22 22:30:23

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		二极管开关
页数	文件大小	规格书
6页	133K
描述
30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBD301LT1 数据手册

Order this document

by MBD301/D

SEMICONDUCTOR TECHNICAL DATA

Schottky Barrier Diodes

Motorola Preferred Devices

30 VOLTS

SILICON HOT–CARRIER

DETECTOR AND SWITCHING

DIODES

These devices are designed primarily for high–efficiency UHF and VHF detector

applications. They are readily adaptable to many other fast switching RF and digital

applications. They are supplied in an inexpensive plastic package for low–cost,

high–volume consumer and industrial/commercial requirements. They are also

available in a Surface Mount package.

•

The Schottky Barrier Construction Provides Ultra–Stable Characteristics by

Eliminating the “Cat–Whisker” or “S–Bend” Contact

•

Extremely Low Minority Carrier Lifetime – 15 ps (Typ)

Very Low Capacitance – 1.5 pF (Max) @ V = 15 V

Low Reverse Leakage – I = 13 nAdc (Typ) MBD301, MMBD301

CASE 182–02, STYLE 1

(TO–226AC)

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

MBD301

MMBD301LT1

Value

Rating

Reverse Voltage

Forward Power Dissipation

Symbol

Unit

CATHODE

ANODE

Volts

@ T = 25°C

280

2.8

200

2.0

mW/°C

Derate above 25°C

Operating Junction

Temperature Range

°C

–55 to +125

–55 to +150

Storage Temperature Range

DEVICE MARKING

MMBD301LT1 = 4T

stg

CASE 318–08, STYLE 8

SOT–23 (TO–236AB)

CATHODE

ANODE

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

—

Typ

—

Max

—

Unit

Volts

Reverse Breakdown Voltage (I = 10 µA)

(BR)R

Total Capacitance (V = 15 V, f = 1.0 MHz) Figure 1

0.9

1.5

—

Minority Carrier Lifetime (I = 5.0 mA, Krakauer Method) Figure 2

—

Reverse Leakage (V = 25 V) Figure 3

—

200

0.45

0.6

nAdc

Vdc

Forward Voltage (I = 1.0 mAdc) Figure 4

—

0.38

0.52

Forward Voltage (I = 10 mAdc) Figure 4

—

NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk.

Thermal Clad is a registered trademark of the Berquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6

中文翻译

下载PDF

与MBD301LT1相关器件

型号	品牌	获取价格	描述	数据表
MBD3057	TE	获取价格	Zero Bias Operation
MBD3057-C18	TE	获取价格	Zero Bias Operation
MBD330D	MOTOROLA	获取价格	Dual Schottky Barrier Diodes
MBD330DWT1	ETL	获取价格	Dual SCHOTTKY Barrier Diodes
MBD330DWT1	MOTOROLA	获取价格	Dual Schottky Barrier Diodes
MBD330DWT1	ONSEMI	获取价格	Dual Schottky Barrier Diodes
MBD330DWT1	LRC	获取价格	Dual SCHOTTKY Barrier Diodes
MBD330DWT1	KEXIN	获取价格	Dual Schottky Barrier Diodes
MBD330DWT1G	ONSEMI	获取价格	Dual Schottky Barrier Diodes
MBD330DWT2	MOTOROLA	获取价格	SILICON, VHF-UHF BAND, MIXER DIODE