Datasheet > MBD4448HAQW_15

MBD4448HAQW_15

更新时间： 2024-11-24 01:23:15

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	658K
描述
Switching Diode

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中文翻译

获取价格

数据手册

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MBD4448HAQW_15 数据手册

MBD4448HAQW/HADW/HCDW/HSDW/HTW

Taiwan Semiconductor

Small Signal Product

Switching Diode

FEATURES

- Fast switching speed

- Surface device type mounting

- Moisture sensitivity level 1

- High conductance power dissipation

- For general purpose switching applications

- Pb free version and RoHS compliant

- Packing code with suffix "G" means

green compound (halogen-free)

SOT-363

MECHANICAL DATA

- Case: SOT-363 small outline plastic package

- Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed : 260°C/10s

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

PARAMETER

VALUE

SYMBOL

UNIT

Power Dissipation

P_D

V_RRM

V_R

200

Repetitive Peak Reverse Voltage

Reverse Voltage

Average Rectified Forward Current

Average Rectified Output Current

I_F(AV)

I_O

500

250

@ t = 1 μs

I_FSM

Non-Repetitive Peak Forward Surge Current

1.5

@ t = 1 s

^oC/W

^oC

Thermal Resistance (Junction to Ambient)

Junction and Storage Temperature Range

R_θJA

625

T_J, T_STG

-55 to 150

PARAMETER

MIN

MAX

SYMBOL

UNIT

I_R=100μA

V_(BR)

Reverse Breakdown Voltage

Forward Voltage

I_F=5.0mA

I_F=10mA

I_F=100mA

I_F=150mA

V_R=70V

V_R=75V, T_J=150^oC

V_R=25V, T_J=150^oC

V_R=20V

0.620

0.715

0.855

1.000

1.250

100

V_F

μA

V_F

Reverse Leakage Current

Junction Capacitance

V_R=6V,

f=1MHz

C_J

t_rr

3.5

Reverse Recovery Time

I_F=5mA, V_R=6V

4.0

Note 1: Device mounted on FR-4 PCB, 1 inch × 0.85 inch × 0.062 inch

Note 2: Short duration test pulse uesd tu minimize self-heating effect

Document Number: DS_S1501009

Version: C15

12 3 4

中文翻译

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