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MBD701G

更新时间： 2024-10-18 03:50:11
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
4页 65K
描述
Silicon Hot−Carrier Diodes Schottky Barrier Diodes

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中文翻译

获取价格

MBD701G 技术参数

是否无铅： 不含铅生命周期：Obsolete
零件包装代码：TO-92包装说明：TO-226AC, 2 PIN
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.60
风险等级：5.33配置：SINGLE
最大二极管电容：1 pF二极管元件材料：SILICON
二极管类型：MIXER DIODE频带：ULTRA HIGH FREQUENCY
JEDEC-95代码：TO-92JESD-30 代码：O-PBCY-T2
JESD-609代码：e1元件数量：1
端子数量：2最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：260
最大功率耗散：0.28 W认证状态：Not Qualified
子类别：Other Diodes表面贴装：NO
技术：SCHOTTKY端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：THROUGH-HOLE端子位置：BOTTOM
处于峰值回流温度下的最长时间：40Base Number Matches：1

MBD701G 数据手册

 浏览型号MBD701G的Datasheet PDF文件第2页浏览型号MBD701G的Datasheet PDF文件第3页浏览型号MBD701G的Datasheet PDF文件第4页 
MBD701, MMBD701LT1  
Preferred Device  
Silicon Hot−Carrier Diodes  
Schottky Barrier Diodes  
These devices are designed primarily for high−efficiency UHF and  
VHF detector applications. They are readily adaptable to many other  
fast switching RF and digital applications. They are supplied in an  
inexpensive plastic package for low−cost, high−volume consumer  
and industrial/commercial requirements. They are also available in a  
Surface Mount package.  
http://onsemi.com  
MARKING  
DIAGRAMS  
Features  
TO−92 2−Lead  
CASE 182  
STYLE 1  
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)  
MBD  
701  
• Very Low Capacitance − 1.0 pF @ V = 20 V  
R
AYWW G  
• High Reverse Voltage − to 70 V  
• Low Reverse Leakage − 200 nA (Max)  
• Pb−Free Packages are Available  
1
G
2
2
1
CATHODE  
ANODE  
MAXIMUM RATINGS  
SOT−23 (TO−236)  
CASE 318  
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
3
STYLE 6  
V
R
70  
V
1
5H M G  
G
Forward Power Dissipation  
P
F
2
@ T = 25°C  
MBD701  
280  
200  
mW  
3
1
A
1
MMBD701LT  
CATHODE  
ANODE  
Derate above 25°C  
MBD701  
MMBD701LT  
2.8  
2.0  
mW/°C  
°C  
A
Y
= Assembly Location  
= Year  
Operating Junction Temperature  
Range  
T
J
−55 to +125  
WW = Work Week  
5H = Device Code (SOT−23)  
Storage Temperature Range  
T
stg  
−55 to +150  
°C  
M
= Date Code*  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
RecommendedOperating Conditions may affect device reliability.  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may vary  
dependingupon manufacturing location.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
ORDERING INFORMATION  
Characteristic  
Symbol Min Typ Max  
Unit  
†
Device  
MBD701  
Package  
Shipping  
Reverse Breakdown Voltage  
V
(BR)R  
70  
−
−
V
TO−92  
1,000 Units / Box  
1,000 Units / Box  
(I = 10 mAdc)  
R
MBD701G  
TO−92  
(Pb−Free)  
Total Capacitance  
C
T
−
0.5  
1.0  
pF  
nAdc  
Vdc  
Vdc  
(V = 20 V, f = 1.0 MHz) Figure 1  
R
MMBD701LT1  
SOT−23 3,000 / Tape & Reel  
Reverse Leakage  
I
−
9.0 200  
0.42 0.5  
R
MMBD701LT1G  
SOT−23 3,000 / Tape & Reel  
(Pb−Free)  
(V = 35 V) Figure 3  
R
Forward Voltage  
V
V
−
F
MMBD701LT3  
SOT−23 10,000/Tape & Reel  
(I = 1.0 mAdc) Figure 4  
F
MMBD701LT3G  
SOT−23 10,000/Tape & Reel  
(Pb−Free)  
Forward Voltage  
−
0.7  
1.0  
F
(I = 10 mAdc) Figure 4  
F
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 − Rev. 4  
MBD701/D  
1234

中文翻译

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MBD701G 替代型号

型号 品牌 替代类型 描述 数据表
MBD701 ONSEMI

类似代替

 SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES
NTE583 NTE

功能相似

 Silicon Rectifier Diode Schottky, RF Switch
MBD701 MOTOROLA

功能相似

 70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

与MBD701G相关器件

型号 品牌 获取价格 描述 数据表
MBD701LT1 MOTOROLA

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 		70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES
MBD701RL MOTOROLA

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 		Mixer Diode, Ultra High Frequency, Silicon, TO-92, PLASTIC, CASE 182-02, TO-226AC, 2 PIN
MBD701RL1 MOTOROLA

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 		SILICON, UHF BAND, MIXER DIODE, PLASTIC, CASE 182-02, TO-226AC, 2 PIN
MBD701RLRA MOTOROLA

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 		Mixer Diode, Ultra High Frequency, Silicon, TO-92, PLASTIC, CASE 182-02, TO-226AC, 2 PIN
MBD701RLRB MOTOROLA

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 		Mixer Diode, Ultra High Frequency, Silicon, TO-92, PLASTIC, CASE 182-02, TO-226AC, 2 PIN
MBD701RLRE MOTOROLA

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 		Mixer Diode, Ultra High Frequency, Silicon, TO-92, PLASTIC, CASE 182-02, TO-226AC, 2 PIN
MBD701RLRF MOTOROLA

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 		SILICON, UHF BAND, MIXER DIODE, PLASTIC, CASE 182-02, TO-226AC, 2 PIN
MBD701RLRM MOTOROLA

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 		Mixer Diode, Ultra High Frequency, Silicon, TO-92, PLASTIC, CASE 182-02, TO-226AC, 2 PIN
MBD701RLRP MOTOROLA

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 		SILICON, UHF BAND, MIXER DIODE, PLASTIC, CASE 182-02, TO-226AC, 2 PIN
MBD701ZL1 MOTOROLA

获取价格

 		SILICON, UHF BAND, MIXER DIODE, PLASTIC, CASE 182-02, TO-226AC, 2 PIN

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