Datasheet > MBD770DWT1

MBD770DWT1

更新时间： 2024-10-18 03:50:11

品牌	Logo	应用领域
ETL		二极管
页数	文件大小	规格书
5页	546K
描述
Dual SCHOTTKY Barrier Diodes

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBD770DWT1 数据手册

Dual SCHOTTKY Barrier Diodes

Application circuit designs are moving toward the consolidation of

device count and into smaller packages. The new SOT–363 package is

a solution which simplifies circuit design, reduces device count, and

reduces board space by putting two discrete devices in one small six–

leaded package. The SOT–363 is ideal for low–power surface mount

applications where board space is at a premium, such as portable

products.

MBD110DWT1

MBD330DWT1

MBD770DWT1

Surface Mount Comparisons:

SOT–363

SOT–23

7.6

Area (mm )

4.6

120

Max Package P _D(mW)

Device Count

225

SOT–363

CASE 419B–01, STYLE 6

Space Savings:

Package

1 × SOT–23

40%

2 × SOT–23

70%

Cathode

N/C

Anode

SOT–363

The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular

MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed

for high–efficiency UHF and VHF detector applications. Readily available to many other

fast switching RF and digital applications.

• Extremely Low Minority Carrier Lifetime

Anode

N/C Cathode

• Very Low Capacitance

• Low Reverse Leakage

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

MBD110DWT1

MBD330DWT1

MBD770DWT1

V R

7.0

Vdc

Forward Power Dissipation

T A = 25°C

P F

120

Junction Temperature

Storage Temperature Range

T J

–55 to +125

–55 to +150

°C

T stg

DEVICE MARKING

MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5

Thermal Clad is a trademark of the Bergquist Company.

MBD110–1/5

12 3 4 5

中文翻译

下载PDF

与MBD770DWT1相关器件

型号	品牌	获取价格	描述	数据表
MBD770DWT1G	ONSEMI	获取价格	Dual Schottky Barrier Diodes
MBD770DWT2	MOTOROLA	获取价格	SILICON, VHF-UHF BAND, MIXER DIODE
MBD770DWT3	MOTOROLA	获取价格	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, CASE 419B-01, 6 PIN
MBD-902-AL	ETC	获取价格	Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor
MBD-902-CL	ETC	获取价格	Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor
MBD-902-XL	ETC	获取价格	Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor
MBDF1200ZEL	ONSEMI	获取价格	3000mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8
MBDF1200ZEL	MOTOROLA	获取价格	3000mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8
MBDQ01	POLYFET	获取价格	Power RF Amplifiers
MBE/SMA0414-150.1%CECC06C1437R	VISHAY	获取价格	Fixed Resistor, Thin Film, 0.65W, 437ohm, 500V, 0.1% +/-Tol, 15ppm/Cel, Through Hole Mount