是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | SC-88 | 包装说明: | R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.60 |
Factory Lead Time: | 1 week | 风险等级: | 0.77 |
Samacsys Description: | MBD770DWT1G, SS SC88 SHKY DIO 70V TR ON Semiconductor MBD770DWT1G Dual Schottky Diode, 100mA, 70V, 6-Pin SOT-363 | 配置: | SEPARATE, 2 ELEMENTS |
最大二极管电容: | 1 pF | 二极管元件材料: | SILICON |
二极管类型: | MIXER DIODE | 最大正向电压 (VF): | 1 V |
频带: | ULTRA HIGH FREQUENCY | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
最大功率耗散: | 0.38 W | 认证状态: | Not Qualified |
参考标准: | AEC-Q101 | 最大重复峰值反向电压: | 70 V |
子类别: | Rectifier Diodes | 表面贴装: | YES |
技术: | SCHOTTKY | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MBD770DWT1 | ONSEMI |
类似代替 |
Dual Schottky Barrier Diodes | |
MBD770DWT1 | MOTOROLA |
功能相似 |
Dual Schottky Barrier Diodes |
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MBD770DWT2 | MOTOROLA |
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Power RF Amplifiers | |
MBE/SMA0414-150.1%CECC06C1437R | VISHAY |
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Fixed Resistor, Thin Film, 0.65W, 437ohm, 500V, 0.1% +/-Tol, 15ppm/Cel, Through Hole Mount | |
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Fixed Resistor, Thin Film, 0.65W, 634000ohm, 500V, 0.1% +/-Tol, 15ppm/Cel, Through Hole Mo |