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MBDF1200ZEL

更新时间： 2024-11-26 19:59:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
10页 186K
描述
3000mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8

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MBDF1200ZEL 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TSSOP包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.38
其他特性：LOGIC LEVEL COMPATIBLE配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：3 A
最大漏极电流 (ID)：3 A最大漏源导通电阻：0.038 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：140 pF
JESD-30 代码：R-PDSO-G8元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：1 W
认证状态：Not Qualified子类别：FET General Purpose Powers
表面贴装：YES端子面层：Nickel/Gold/Palladium (Ni/Au/Pd)
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MBDF1200ZEL 数据手册

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Order this document  
by MBDF1200Z/D  
SEMICONDUCTOR TECHNICAL DATA  
Medium Power Surface Mount Products  
Motorola Preferred Device  
DUAL TMOS  
POWER MOSFET  
3 AMPERES  
EZFETs are an advanced series of power MOSFETs which  
utilize Motorola’s High Cell Density HDTMOS process and contain  
monolithic back–to–back zener diodes. These zener diodes  
provide protection against ESD and unexpected transients. These  
20 VOLTS  
R
= 38 m  
DS(on)  
miniature surface mount MOSFETs feature ultra low R  
and  
DS(on)  
true logic level performance. EZFET devices are designed for use  
in low voltage applications where power efficiency is important.  
Typical applications are Li–ion battery protection, and power  
management in portable and battery powered products such as  
computers, printers, cellular and cordless phones.  
•
•
•
•
•
•
Zener Protected Gates Provide Electrostatic Discharge Protection  
Ultra Low R Provides Higher Efficiency and Extends Battery Life  
Logic Level Gate Drive — Can Be Driven by Logic ICs  
CASE 948J–01  
TSSOP–8  
D
DS(on)  
Miniature TSSOP–8 Surface Mount Package — Saves Board Space  
I
Specified at Elevated Temperature  
DSS  
Mounting Information for TSSOP–8 Package Provided  
G
1
2
3
4
8
7
6
5
Drain–1  
Drain–2  
Source–2  
Source–2  
Gate–2  
Source–1  
Source–1  
Gate–1  
S
Top View  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Max  
20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Drain–to–Source Voltage  
V
DSS  
Drain–to–Gate Voltage (R  
= 1.0 MΩ)  
Gate–to–Source Voltage — Continuous  
V
DGR  
20  
GS  
V
GS  
± 12  
(1)  
Drain Current — Continuous @ T = 25°C  
Drain Current — Pulsed  
I
D
3.0  
48  
A
I
DM  
Total Power Dissipation @ T = 25°C (1)  
P
1.0  
– 55 to 150  
1.25  
Watts  
°C  
A
D
Operating and Storage Temperature Range  
T , T  
J stg  
Continuous Source Current (Diode Conduction) (2)  
I
S
Adc  
THERMAL RESISTANCE  
Rating  
(1)  
Symbol  
Max  
Unit  
Thermal Resistance — Junction to Ambient  
R
125  
°C/W  
θJA  
(1) When mounted on 1 inch square FR–4 or G–10 board (V  
(2) When mounted on FR–4 Board, t ≤ 10 sec.  
= 4.5 V, @ 10 Seconds)  
GS  
DEVICE MARKING  
ORDERING INFORMATION  
Device  
Reel Size  
Tape Width  
12 mm embossed tape  
Quantity  
2000 units  
D1200Z  
MBDF1200ZEL  
13″  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-  
mark of the Bergquist Company.  
Motorola, Inc. 1998  
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