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MBD701 PDF预览

MBD701

更新时间： 2024-11-22 22:30:23
品牌 Logo 应用领域
安森美 - ONSEMI 微波混频二极管开关
页数 文件大小 规格书
4页 93K
描述
SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES

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中文翻译

获取价格

MBD701 技术参数

是否无铅： 含铅生命周期：End Of Life
零件包装代码：TO-92包装说明：PLASTIC, CASE 182-06, TO-226AC, 2 PIN
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.60
Factory Lead Time：1 week风险等级：5.32
配置：SINGLE最大二极管电容：1 pF
二极管元件材料：SILICON二极管类型：MIXER DIODE
频带：ULTRA HIGH FREQUENCYJEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-T2JESD-609代码：e0
元件数量：1端子数量：2
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：240最大功率耗散：0.28 W
认证状态：Not Qualified子类别：Other Diodes
表面贴装：NO技术：SCHOTTKY
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
Base Number Matches：1

MBD701 数据手册

 浏览型号MBD701的Datasheet PDF文件第2页浏览型号MBD701的Datasheet PDF文件第3页浏览型号MBD701的Datasheet PDF文件第4页 
Order this document  
by MBD701/D  
SEMICONDUCTOR TECHNICAL DATA  
Schottky Barrier Diodes  
Motorola Preferred Devices  
These devices are designed primarily for high–efficiency UHF and VHF detector  
applications. They are readily adaptable to many other fast switching RF and digital  
applications. They are supplied in an inexpensive plastic package for low–cost,  
high–volume consumer and industrial/commercial requirements. They are also  
available in a Surface Mount package.  
70 VOLTS  
HIGH–VOLTAGE  
SILICON HOT–CARRIER  
DETECTOR AND SWITCHING  
DIODES  
•
•
•
•
Extremely Low Minority Carrier Lifetime – 15 ps (Typ)  
Very Low Capacitance – 1.0 pF @ V = 20 V  
R
High Reverse Voltage – to 70 Volts  
Low Reverse Leakage – 200 nA (Max)  
1
2
CASE 182–02, STYLE 1  
(TO–226AC)  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
MBD701  
MMBD701LT1  
Value  
70  
2
1
Rating  
Reverse Voltage  
Forward Power Dissipation  
Symbol  
Unit  
CATHODE  
ANODE  
V
R
Volts  
P
F
J
@ T = 25°C  
280  
2.8  
200  
2.0  
mW  
mW/°C  
A
3
Derate above 25°C  
Operating Junction  
Temperature Range  
T
°C  
°C  
1
–55 to +125  
–55 to +150  
2
Storage Temperature Range  
DEVICE MARKING  
MMBD701LT1 = 5H  
T
stg  
CASE 318–08, STYLE 8  
SOT–23 (TO–236AB)  
3
1
CATHODE  
ANODE  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
70  
—
Typ  
—
Max  
—
Unit  
Volts  
pF  
Reverse Breakdown Voltage (I = 10 µAdc)  
V
(BR)R  
R
Total Capacitance (V = 20 V, f = 1.0 MHz) Figure 1  
C
0.5  
9.0  
0.42  
0.7  
1.0  
200  
0.5  
1.0  
R
T
Reverse Leakage (V = 35 V) Figure 3  
I
R
—
nAdc  
Vdc  
Vdc  
R
Forward Voltage (I = 1.0 mAdc) Figure 4  
V
V
—
F
F
Forward Voltage (I = 10 mAdc) Figure 4  
—
F
F
NOTE: MMBD701LT1 is also available in bulk packaging. Use MMBD701L as the device title to order this device in bulk.  
Thermal Clad is a registered trademark of the Berquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1997  
1234

中文翻译

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MBD701 替代型号

型号 品牌 替代类型 描述 数据表
MBD701G ONSEMI

类似代替

 Silicon Hot−Carrier Diodes Schottky Barrier Diodes
MBD701 MOTOROLA

功能相似

 70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

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MBD701_06 ONSEMI

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 		Silicon Hot−Carrier Diodes Schottky Barrier Diodes
MBD701_09 ONSEMI

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 		Silicon Hot-Carrier Diodes Schottky Barrier Diodes
MBD701G ONSEMI

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 		Silicon Hot−Carrier Diodes Schottky Barrier Diodes
MBD701LT1 MOTOROLA

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 		70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES
MBD701RL MOTOROLA

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 		Mixer Diode, Ultra High Frequency, Silicon, TO-92, PLASTIC, CASE 182-02, TO-226AC, 2 PIN
MBD701RL1 MOTOROLA

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 		SILICON, UHF BAND, MIXER DIODE, PLASTIC, CASE 182-02, TO-226AC, 2 PIN
MBD701RLRA MOTOROLA

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 		Mixer Diode, Ultra High Frequency, Silicon, TO-92, PLASTIC, CASE 182-02, TO-226AC, 2 PIN
MBD701RLRB MOTOROLA

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 		Mixer Diode, Ultra High Frequency, Silicon, TO-92, PLASTIC, CASE 182-02, TO-226AC, 2 PIN
MBD701RLRE MOTOROLA

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 		Mixer Diode, Ultra High Frequency, Silicon, TO-92, PLASTIC, CASE 182-02, TO-226AC, 2 PIN
MBD701RLRF MOTOROLA

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 		SILICON, UHF BAND, MIXER DIODE, PLASTIC, CASE 182-02, TO-226AC, 2 PIN

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