Datasheet > MBD54DWT1G_09

MBD54DWT1G_09

更新时间： 2024-11-23 12:19:59

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
4页	135K
描述
Dual Schottky Barrier Diodes

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBD54DWT1G_09 数据手册

MBD54DWT1G

Preferred Device

Dual Schottky Barrier

Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

http://onsemi.com

30 VOLTS

DUAL HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

Features

• Extremely Fast Switching Speed

• Low Forward Voltage − 0.35 V @ I = 10 mAdc

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Anode 1

N/C 2

6 Cathode

5 N/C

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

Rating

Reverse Voltage

Symbol

Value

Unit

Cathode 3

4 Anode

Forward Power Dissipation

@ T = 25°C

150

1.2

mW/°C

MARKING

Derate above 25°C

DIAGRAM

Forward Current (DC)

Junction Temperature

Storage Temperature Range

200 Max

125 Max

°C

SOT−363

CASE 419B

STYLE 6

stg

−55 to +150

°C

BL MG

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

MBD54DWT1G

SOT−363

(Pb−Free)

3000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Publication Order Number:

October, 2009 − Rev. 7

MBD54DWT1/D

12 3 4

中文翻译

下载PDF

与MBD54DWT1G_09相关器件

型号	品牌	获取价格	描述	数据表
MBD54DWT2	ONSEMI	获取价格	2 ELEMENT, SILICON, SIGNAL DIODE, CASE 419B-01, 6 PIN
MBD54DWT3	MOTOROLA	获取价格	SILICON, MIXER DIODE, CASE 419B-01, 6 PIN
MBD701	MOTOROLA	获取价格	70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES
MBD701	ONSEMI	获取价格	SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES
MBD701	LRC	获取价格	Silicon Hot-Carrier Diodes
MBD701_06	ONSEMI	获取价格	Silicon Hot−Carrier Diodes Schottky Barrier Diodes
MBD701_09	ONSEMI	获取价格	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
MBD701G	ONSEMI	获取价格	Silicon Hot−Carrier Diodes Schottky Barrier Diodes
MBD701LT1	MOTOROLA	获取价格	70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES
MBD701RL	MOTOROLA	获取价格	Mixer Diode, Ultra High Frequency, Silicon, TO-92, PLASTIC, CASE 182-02, TO-226AC, 2 PIN