MBD54DWT1D

更新时间： 2024-10-17 22:30:03

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
4页	55K
描述
Dual Schottky Barrier Diodes

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中文翻译

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数据手册

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MBD54DWT1D 数据手册

MBD54DWT1

Preferred Device

Dual Schottky Barrier

Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

http://onsemi.com

30 VOLTS

DUAL HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

Features

• Extremely Fast Switching Speed

• Low Forward Voltage − 0.35 V @ I = 10 mAdc

• Pb−Free Package is Available

Anode 1

N/C 2

6 Cathode

5 N/C

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

Rating

Reverse Voltage

Forward Power Dissipation

Symbol

Value

Unit

Cathode 3

4 Anode

@ T = 25°C

150

1.2

mW/°C

Derate above 25°C

MARKING

DIAGRAM

Forward Current (DC)

Junction Temperature

Storage Temperature Range

200 Max

125 Max

°C

stg

−55 to +150

°C

SOT−363

CASE 419B−01

STYLE 6

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

M = Date Code

ORDERING INFORMATION

†

Device

Package

Shipping

MBD54DWT1

SOT−363

3000/Tape & Reel

MBD54DWT1G

SOT−363

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

February, 2005 − Rev. 6

MBD54DWT1/D

12 3 4

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