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MBD54DWT1G PDF预览

MBD54DWT1G

更新时间: 2024-10-17 21:53:35
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管测试光电二极管快速恢复二极管
页数 文件大小 规格书
4页 55K
描述
Dual Schottky Barrier Diodes

MBD54DWT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SC-88包装说明:R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:1 week风险等级:1.1
Is Samacsys:N应用:FAST RECOVERY
最小击穿电压:30 V配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.6 A元件数量:2
相数:1端子数量:6
最高工作温度:125 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.15 W认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向电流:2 µA
最大反向恢复时间:0.005 µs反向测试电压:25 V
子类别:Other Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

MBD54DWT1G 数据手册

 浏览型号MBD54DWT1G的Datasheet PDF文件第2页浏览型号MBD54DWT1G的Datasheet PDF文件第3页浏览型号MBD54DWT1G的Datasheet PDF文件第4页 
MBD54DWT1  
Preferred Device  
Dual Schottky Barrier  
Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
http://onsemi.com  
30 VOLTS  
DUAL HOT−CARRIER  
DETECTOR AND SWITCHING  
DIODES  
Features  
Extremely Fast Switching Speed  
Low Forward Voltage − 0.35 V @ I = 10 mAdc  
Pb−Free Package is Available  
F
Anode 1  
N/C 2  
6 Cathode  
5 N/C  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
Rating  
Reverse Voltage  
Forward Power Dissipation  
Symbol  
Value  
Unit  
Cathode 3  
4 Anode  
V
R
30  
V
P
F
@ T = 25°C  
150  
1.2  
mW  
mW/°C  
A
Derate above 25°C  
MARKING  
DIAGRAM  
Forward Current (DC)  
Junction Temperature  
Storage Temperature Range  
I
200 Max  
125 Max  
mA  
°C  
F
T
J
6
1
T
stg  
55 to +150  
°C  
SOT−363  
CASE 419B−01  
STYLE 6  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
M
BL  
1
M = Date Code  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MBD54DWT1  
SOT−363  
3000/Tape & Reel  
3000/Tape & Reel  
MBD54DWT1G  
SOT−363  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
February, 2005 − Rev. 6  
MBD54DWT1/D  

MBD54DWT1G 替代型号

型号 品牌 替代类型 描述 数据表
MBD54DWT1 ONSEMI

类似代替

Dual Schottky Barrier Diodes
BAT54DW-7-F DIODES

功能相似

DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

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