Datasheet > MBD54DWT1

MBD54DWT1

更新时间： 2024-11-23 03:50:11

品牌	Logo	应用领域
ETL		二极管光电二极管
页数	文件大小	规格书
4页	414K
描述
Dual SCHOTTKY Barrier Diodes

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中文翻译

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数据手册

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MBD54DWT1 数据手册

Dual SCHOTTKY Barrier Diodes

MBD54DWT1

These SCHOTTKY barrier diodes are designed for high speed switching

applications, circuit protection, and vol tage clamping. Extremely low forward

voltage reduces conduction loss. Miniature surface mount package is excellent

for hand held and portable applications where space is limited.

• Extremely Fast Switching Speed

30 VOLTS

DUAL HOT–CARRIER

DETECTOR AND SWITCHING

DIODES

• Low Forward Voltage — 0.35 V @ I _F= 10 mAdc

Cathode

N/C

Anode

SOT–363

CASE 419B–01, STYLE 6

Anode

N/C Cathode

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

Rating

Symbol

Value

Unit

Reverse Voltage

V R

P F

Volts

Forward Power Dissipation

@ T A = 25°C

150

1.2

Derate above 25°C

mW/°C

Forward Current (DC)

Junction Temperature

Storage Temperature Range

I F

T J

200 Max

125 Max

°C

T stg

–55 to +150

°C

DEVICE MARKING

MBD54DWT1 = BL

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

V _(BR)R

C _T

Min

—

Typ

—

Max

—

Unit

Reverse Breakdown Voltage (I _R= 10 µA)

Total Capacitance (V _R= 1.0 V, f = 1.0 MHz)

Reverse Leakage (V _R= 25 V)

Forward Voltage (I _F= 0.1 mAdc)

Forward Voltage (I _F= 30 mAdc)

Forward Voltage (I _F= 100 mAdc)

Reverse Recovery Time

Volts

7.6

I _R

—

0.5

2.0

0.24

0.5

1.0

µAdc

Vdc

V _F

—

0.22

0.41

0.52

V _F

—

V _F

—

t _rr

—

5.0

(I _F= I _R= 10 mAdc, I _R(REC)= 1.0 mAdc) Figure 1

Forward Voltage (I F = 1.0 mAdc)

Forward Voltage (I F = 10 mAdc)

Forward Current (DC)

V _F

I _F

—

0.29

0.35

—

0.32

0.40

200

300

600

Vdc

mAdc

Repetitive Peak Forward Current

I _FRM

—

Non–Repetitive Peak Forward Current (t <1.0s) I _FSM

—

MBD54–1/4

12 3 4

中文翻译

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